74HCT74D,652 Philips Semiconductors, 74HCT74D,652 Datasheet - Page 3

• Manufacturer Part Number: 74HCT74D,652
• Description: FLIP-FLOP; CMOS; 5V(NOM.) 2.0V(MIN.), 0.8V(MAX)VOLTAGE, DC INPUT; 3.7V(MIN.)
• Manufacturer: Philips Semiconductors

Specifications of 74HCT74D,652

• Capacitance, Input, Maximum: 3.5 pF (Typ.)
• Circuit Type: Low-Power Schottky, Silicon Gate
• Current, Input, Diode: ±20 mA (Max.)
• Current, Leakage, Input: ±1 μA (Max.)
• Current, Output, Diode: ±20 mA (Max.)
• Current, Quiescent Supply: 80 uA (Max.)
• Function Type: 4-Inputs, D-Type
• Input Fall Time: 500 ns (Max.)
• Input Rise Time: 500 ns (Max.)
• Logic Function: Flip-Flop
• Logic Type: CMOS/TTL
• Number Of Circuits: Dual
• Package Type: SO-14
• Power Dissipation: 500 mW
• Propagation Delay: 15 ns (Typ.)
• Special Features: Positive-Edge-Triggered
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Temperature, Operating, Range: -40 to +125 °C
• Voltage, Dc Input: 5.5 V (Max.)
• Voltage, Dc Output: 5.5 V (Max.)
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Philips Semiconductors
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70 C derate linearly with 8 mW/K.
V
V
V
T
t
V
I
I
I
I
T
P
r
IK
OK
O
CC
SYMBOL
SYMBOL
, t
amb
stg
CC
I
O
CC
tot
Dual D-type flip-flop with set and reset;
positive-edge trigger
f
, I
For SSOP14 and TSSOP14 packages: above 60 C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60 C derate linearly with 4.5 mW/K.
For DIP14 packages: above 70 C derate linearly with 12 mW/K.
GND
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall
times
supply voltage
input diode current
output diode current
output source or sink current
V
storage temperature
power dissipation
CC
PARAMETER
or GND current
PARAMETER
V
V
V
CC
CC
CC
CONDITIONS
= 2.0 V
= 4.5 V
= 6.0 V
V
note 1
V
note 1
T
0.5 V < V
amb
I
O
< 0.5 V or V
< 0.5 V or V
= 40 to +125 C; note 2
2.0
0
0
CONDITIONS
7
MIN.
40
O
< V
I
CC
O
> V
74HC74
5.0
+25
6.0
> V
+ 0.5 V; note 1
TYP.
CC
CC
+ 0.5 V;
+ 0.5 V;
6.0
V
V
+125
1000
500
400
MAX.
CC
CC
4.5
0
0
MIN.
40
0.5
65
MIN.
74HC74; 74HCT74
74HCT74
5.0
+25
6.0
TYP.
+7.0
+150
500
20
20
25
100
Product specification
MAX.
5.5
V
V
+125
500
500
500
MAX.
CC
CC
V
mA
mA
mA
mA
mW
C
UNIT
V
V
V
ns
ns
ns
UNIT
C