SI1012X-T1-E3 Siliconix / Vishay, SI1012X-T1-E3 Datasheet
SI1012X-T1-E3
Manufacturer Part Number
SI1012X-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.41Ohm; ID 500mA; SC-89 (SOT-490); PD 250mW
Manufacturer
Siliconix / Vishay
Datasheet
1.SI1012X-T1-E3.pdf
(2 pages)
Specifications of SI1012X-T1-E3
Channel Type
N
Current, Drain
500 mA
Gate Charge, Total
750 pC
Package Type
SC-89 (SOT-490)
Polarization
N-Channel
Power Dissipation
250 mW
Resistance, Drain To Source On
0.41 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
–55 °C
Time, Turn-off Delay
25 ns
Time, Turn-on Delay
5 ns
Transconductance, Forward
1 S
Voltage, Breakdown, Drain To Source
20 V
Voltage, Forward, Diode
0.8 V
Voltage, Gate To Source
±6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1012X-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
36 000
Company:
Part Number:
SI1012X-T1-E3
Manufacturer:
VISHAY
Quantity:
3 550
Part Number:
SI1012X-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board.
PRODUCT SUMMARY
ORDERING INFORMATION
Part Number
Si1012R-T1-E3 (Lead (Pb)-free)
Si1012R-T1-GE3 (Lead (Pb)-free
and Halogen-free)
Si1012X-T1-E3 (Lead (Pb)-free)
Si1012X-T1-GE3 (Lead (Pb)-free
and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
V
DS
20
(V)
G
S
0.70 at V
0.85 at V
1.25 at V
a
1
2
SC-75A or SC-89
R
DS(on)
Top View
J
b
b
GS
GS
GS
= 150 °C)
for SC-75
for SC-89
= 4.5 V
= 2.5 V
= 1.8 V
(Ω)
N-Channel 1.8-V (G-S) MOSFET
b
3
(SOT-416)
(SOT-490)
Package
SC-75A
SC-89
D
b
I
A
D
600
500
350
= 25 °C, unless otherwise noted
(mA)
Marking
Code
C
A
T
T
T
T
T
T
A
A
A
A
A
A
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
BENEFITS
• Halogen-free Option Available
• TrenchFET
• Gate-Source ESD Protected: 2000 V
• High-Side Switching
• Low On-Resistance: 0.7 Ω
• Low Threshold: 0.8 V (typ.)
• Fast Switching Speed: 10 ns
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
Memories
Symbol
T
J
ESD
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
®
Power MOSFET: 1.8 V Rated
600
400
275
175
275
160
5 s
90
- 55 to 150
1000
2000
± 6
20
Steady State
Vishay Siliconix
500
350
250
150
250
140
80
Si1012R/X
RoHS
COMPLIANT
Unit
mW
mA
°C
V
V
1
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SI1012X-T1-E3 Summary of contents
Page 1
... V GS SC-75A or SC- Top View ORDERING INFORMATION Part Number Si1012R-T1-E3 (Lead (Pb)-free) Si1012R-T1-GE3 (Lead (Pb)-free and Halogen-free) Si1012X-T1-E3 (Lead (Pb)-free) Si1012X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current ...
Page 2
Si1012R/X Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b ...