SI4925BDY-T1-E3/BKN Siliconix / Vishay, SI4925BDY-T1-E3/BKN Datasheet

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SI4925BDY-T1-E3/BKN

Manufacturer Part Number
SI4925BDY-T1-E3/BKN
Description
DUAL P-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Siliconix / Vishay
Datasheet

Specifications of SI4925BDY-T1-E3/BKN

Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72001
S09-0869-Rev. D, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Si4925BDY -T1-E3
Si4925BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.041 at V
0.025 at V
Top View
SO-8
R
DS(on)
J
a
= 150 °C)
a
Dual P-Channel 30-V (D-S) MOSFET
GS
GS
= - 4.5 V
(Ω)
= - 10 V
(Lead (Pb)-free)
8
7
6
5
a
D
D
D
D
1
1
2
2
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 7.1
- 5.5
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
• Load Switches
Symbol
Symbol
T
R
R
Definition
- Notebook PCs
- Desktop PCs
- Game Stations
J
V
V
I
P
, T
thJA
thJF
I
DM
I
DS
GS
D
S
D
stg
G
1
P-Channel MOSFET
®
Power MOSFET
Typical
10 s
- 7.1
- 5.7
- 1.7
2.0
1.3
50
85
30
D
S
1
1
- 55 to 150
± 20
- 30
- 40
G
Steady State
2
Maximum
P-Channel MOSFET
62.5
- 5.3
- 4.3
- 0.9
110
1.1
0.7
40
Vishay Siliconix
Si4925BDY
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4925BDY-T1-E3/BKN Summary of contents

Page 1

... Top View Ordering Information: Si4925BDY -T1-E3 (Lead (Pb)-free) Si4925BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4925BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72001 S09-0869-Rev. D, 18-May- °C J 0.8 1.0 1.2 1.4 Si4925BDY Vishay Siliconix 2500 2000 C iss 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 7 1.4 1.2 1.0 ...

Page 4

... Si4925BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 I 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 µ 100 125 150 100 Limited by R DS(on D(on) ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72001. Document Number: 72001 S09-0869-Rev. D, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4925BDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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