ZXMP3F30FHTA Diodes Inc, ZXMP3F30FHTA Datasheet

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ZXMP3F30FHTA

Manufacturer Part Number
ZXMP3F30FHTA
Description
MOSFET & Power Driver ICs 30V P-Channel MOSFET 20V VGS -15.3A IDM
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMP3F30FHTA

Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

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Quantity
Price
Part Number:
ZXMP3F30FHTA
Manufacturer:
Diodes
Quantity:
78 900
Part Number:
ZXMP3F30FHTA
Manufacturer:
ZETEX
Quantity:
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Part Number:
ZXMP3F30FHTA
Manufacturer:
ZETEX
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ZXMP3F30FH
30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex has been designed to minimize the
on-state resistance (R
Features
Applications
Ordering information
Device
ZXMP3F30FHTA
Device marking
KPA
I
Issue 1 - August 2008
© Diodes Incorporated
Low on-resistance
Fast switching speed
4.5V gate drive capability
Thermally enhanced SOT23 package
Power management
Portable Equipment
Battery charging
V
(BR)DSS (V)
-30
0.140 @ V
0.080 @ V
Reel size
R
(inches)
DS
DS(on)
7”
(on)
GS
GS
) and yet maintain superior switching performance.
= -4.5V
= -10V
(Ω)
Tape width
8mm
(mm)
I
D
-4.0
(A)
1
Quantity
per reel
3,000
Pinout – top view
www.diodes.com
www.zetex.com
Part no.

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ZXMP3F30FHTA Summary of contents

Page 1

... Thermally enhanced SOT23 package Applications • Power management • Portable Equipment • Battery charging Ordering information Device Reel size (inches) ZXMP3F30FHTA 7” Device marking KPA I Issue 1 - August 2008 © Diodes Incorporated I (A) (Ω) D -4.0 = -10V = -4.5V ) and yet maintain superior switching performance ...

Page 2

... Mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - August 2008 © Diodes Incorporated (b) = -10V; T =25°C A (b) = -10V ...

Page 3

... FR4 100 80 D=0 D=0.2 20 Single Pulse 0 100µ 1m 10m 100m Pulse Width (s) Transient Thermal Impedance Issue 1 - August 2008 © Diodes Incorporated 1.0 0.8 0.6 0.4 1ms 0.2 100µs 0 100 10 D=0.1 D=0.05 1 100µ ...

Page 4

... Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - August 2008 © Diodes Incorporated = 25°C unless otherwise stated) amb Min. ...

Page 5

... Drain-Source Voltage (V) DS Output Characteristics 10V 150° Gate-Source Voltage (V) GS Typical Transfer Characteristics 0.1 0 Drain Current (A) D On-Resistance v Drain Current Issue 1 - August 2008 © Diodes Incorporated 150° 0.01 10 0.1 -V 1.6 1.4 1.2 1 25°C 0.8 0.6 0.4 4 -50 Tj Junction Temperature (° ...

Page 6

... Typical Characteristics 600 500 400 C ISS C 300 OSS 200 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Issue 1 - August 2008 © Diodes Incorporated 1MHz RSS Charge (nC) Gate-Source Voltage v Gate Charge 6 ZXMP3F30FH V = 15V www.zetex.com www.diodes.com ...

Page 7

... Packaging Details – SOT23 Issue 1 - August 2008 © Diodes Incorporated ZXMP3F30FH 7 www.diodes.com www.zetex.com ...

Page 8

... The circuits in this design/application note are offered as design ideas the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise ...

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