ZXMC3F31DN8TA Diodes Inc, ZXMC3F31DN8TA Datasheet
ZXMC3F31DN8TA
Specifications of ZXMC3F31DN8TA
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ZXMC3F31DN8TA Summary of contents
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... Low profile SOIC package Applications • DC-DC Converters SMPS • • Load switching switches • Motor control • Backlighting Ordering information Device Reel size (inches) ZXMC3F31DN8TA 7 Device marking ZXMC 3F31 Issue 1 - September 2008 © Diodes Incorporated 2008 R (Ω) I (A) DS(on) D 0.024 @ V = 10V 7 ...
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... Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - September 2008 © Diodes Incorporated 2008 Symbol V DSS V (b)( 10V ...
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... Pulse Width (s) Transient Thermal Impedance 100 10 1 100µ 1m 10m 100m Pulse Width (s) Pulse Power Dissipation Issue 1 - September 2008 © Diodes Incorporated 2008 10 1 100m 1ms Note (a)(d) 100us 10m =25°C amb 0.1 10 P-channel Safe Operating Area 2.0 1 ...
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... Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - September 2008 © Diodes Incorporated 2008 = 25°C unless otherwise stated) amb Min. ...
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... T = 150° Gate-Source Voltage (V) GS Typical Transfer Characteristics 1000 2.5V 100 10 1 0.1 0.01 0.01 0.1 I Drain Current (A) D On-Resistance v Drain Current Issue 1 - September 2008 © Diodes Incorporated 2008 0.1 2. 25°C 0. 1.6 1.4 1.2 1.0 0 25°C 0.6 0.4 ...
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... Q1 Typical characteristics –cntd. 900 800 700 600 C ISS 500 C 400 300 200 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test circuits Issue 1 - September 2008 © Diodes Incorporated 2008 1MHz OSS 4 C RSS Gate-Source Voltage v Gate Charge 6 ZXMC3F31DN8 15V Charge (nC) www ...
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... Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing Issue 1 - September 2008 © Diodes Incorporated 2008 = 25°C unless otherwise stated) amb Min. ...
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... 150°C 1 0.1 2.0 2.5 -V Gate-Source Voltage (V) GS Typical Transfer Characteristics 2. 0.1 0.01 0.01 0.1 -I Drain Current (A) D On-Resistance v Drain Current Issue 1 - September 2008 © Diodes Incorporated 2008 4. 1.6 1.4 1.2 1 25°C 0.8 0.6 0.4 3.0 3.5 ...
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... Typical characteristics 1000 800 600 C ISS C OSS 400 200 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test circuits Issue 1 - September 2008 © Diodes Incorporated 2008 1MHz RSS Gate-Source Voltage v Gate Charge 9 ZXMC3F31DN8 V = 15V Charge (nC) www.zetex.com www.diodes.com ...
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... A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - September 2008 © Diodes Incorporated 2008 Millimeters DIM Min. Max. 1.35 1.75 e 0.10 0.25 b 4.80 5.00 c 5.80 6.20 U 3.80 4 ...
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... Terms and Conditions All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. ...