MD1812K6-G Supertex, MD1812K6-G Datasheet - Page 4

MOSFET & Power Driver ICs High Speed Quad

MD1812K6-G

Manufacturer Part Number
MD1812K6-G
Description
MOSFET & Power Driver ICs High Speed Quad
Manufacturer
Supertex
Type
High Side/Low Sider
Datasheet

Specifications of MD1812K6-G

Rise Time
6 ns
Fall Time
6 ns
Supply Voltage (min)
4.5 V
Supply Current
7 mA
Maximum Power Dissipation
2200 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
QFN-16
Number Of Drivers
4
Number Of Outputs
4
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Application Information
For proper operation of the MD1812, low inductance bypass
capacitors should be used on the various supply pins. The
GND pin should be connected to the logic ground. The INA,
INB, INC, IND and OE pins should be connected to a logic
source with a swing of GND to VCC, where VCC is 1.8 to 5.0
volts. When input logic(s) is high, output(s) will swing to VL,
and when input(s) logic is low, output(s) will swing to VH. All
inputs must be kept low until the device is powered up. Good
trace practices should be followed corresponding to the
desired operating speed. The internal circuitry of the MD1812
is capable of operating up to 100MHz, with the primary speed
limitation being the loading effects of the load capacitance.
Because of this speed and the high transient currents that
result with capacitive loads, the bypass capacitors should
be as close to the chip pins as possible. Unless the load
specifically requires bipolar drive, the VSS and VL pins should
have low inductance feed-through connections directly to a
ground plane. If these voltages are not zero, then they need
bypass capacitors in a manner similar to the positive power
supplies. The power connection VDD should have a ceramic
bypass capacitor to the ground plane, with short leads and
decoupling components to prevent resonance in the power
leads.
Output drivers, OUTA and OUTC, drive the gate of an
external P-channel MOSFET, while output drivers OUTB
and OUTD drive the gate of an external N-channel MOSFET,
and they all swing from VH to VL. The auxiliary output drive,
OUTG, swings from VSS to VNEG, and drives the gate of an
external P-channel MOSFET via a 2.0KΩ series resistor.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
4
The voltages of VH and VL decide the output signal levels.
These two pins can draw fast transient currents of up to
2.0A, so they should be provided with an appropriate bypass
capacitor located next to the chip pins. A ceramic capacitor
of up to 1.0µF may be appropriate, with a series ferrite bead
to prevent resonance in the power supply lead coming to
the capacitor. Pay particular attention to minimizing trace
lengths, current loop area, and using sufficient trace width
to reduce inductance. Surface mount components are highly
recommended. Since the output impedance of this driver is
very low, in some cases it may be desirable to add a small
series resistance in series with the output signal to obtain
better waveform transitions at the load terminals. This will
reduce the output voltage slew rate at the terminals of a
capacitive load.
The OE pin sets the threshold level of logic for inputs (V
+ V
OUTB and OUTD are at VL. Auxiliary output OUTG, is at
VSS, regardless of the inputs INA or INB.
Pay particular attention that parasitic couplings are minimized
from the output to the input signal terminals. The parasitic
feedback may cause oscillations or spurious waveform
shapes on the edges of signal transitions. Since the input
operates with signals down to 1.8V, even small coupled
voltages may cause problems. Use of a solid ground plane
and good power and signal layout practices will prevent this
problem. Be careful that a circulating ground return current
from a capacitive load cannot react with common inductance
to cause noise voltages in the input logic circuitry. Best timing
performance is obtained for OUTC when the voltage of (V
V
NEG
GND
) = (V
) / 2. When OE is low, OUTA and OUTC are at VH.
H
-V
L
Tel: 408-222-8888
).
www.supertex.com
SS
OE
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