MC33151VD ON Semiconductor, MC33151VD Datasheet - Page 5

• Manufacturer Part Number: MC33151VD
• Description: MOSFET & Power Driver ICs ANA HI SPD DUAL DR
• Manufacturer: ON Semiconductor
• Type: Inverting MOSFET Driverr

Specifications of MC33151VD

• Rise Time: 31 ns
• Fall Time: 32 ns
• Supply Voltage (min): 6.5 V
• Supply Current: 10.5 mA
• Maximum Power Dissipation: 560 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Output Voltage: 0.8 V (Typ)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

90%
10%
90%
10%
-1.0
-2.0
-3.0
3.0
2.0
1.0
0
0
0
Figure 10. Drive Output Saturation Voltage
0.2
Figure 12. Drive Output Rise Time
Figure 8. Propagation Delay
I
0.4
O
, OUTPUT LOAD CURRENT (A)
versus Load Current
V
CC
Logic Input
Sink Saturation
10 ns/DIV
50 ns/DIV
(Load to V
Drive Output
0.6
Source Saturation
(Load to Ground)
CC
0.8
)
V
V
C
T
A
CC
in
L
= 25°C
GND
= 1.0 nF
= 5 V to 0 V
1.0
= 12 V
V
V
C
T
V
80 ms Pulsed Load
120 Hz Rate
T
A
in
A
CC
L
CC
= 1.0 nF
= 25°C
= 25°C
= 5 V to 0 V
= 12 V
= 12 V
1.2
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1.4
5
90%
10%
-0.5
-0.7
-0.9
-1.1
-1.0
1.9
1.7
1.5
1.0
0.8
0.6
3.0
2.0
1.0
0
0
0
0
-55
0
(Drive Output Driven Above V
Source Saturation
(Load to Ground)
Figure 11. Drive Output Saturation Voltage
Sink Saturation
(Load to V
Figure 9. Drive Output Clamp Voltage
0.2
High State Clamp
-25
Figure 13. Drive Output Fall Time
CC
T
)
I
A
O
0.4
versus Clamp Current
, AMBIENT TEMPERATURE (°C)
, OUTPUT LOAD CURRENT (A)
versus Temperature
V
GND
0
CC
V
CC
I
sink
I
sink
GND
0.6
10 ns/DIV
25
CC
= 400 mA
= 10 mA
)
(Drive Output Driven Below Ground)
I
I
source
source
0.8
50
= 400 mA
= 10 mA
Low State Clamp
V
V
C
T
A
CC
in
L
= 1.0 nF
= 25°C
= 5 V to 0 V
1.0
= 12 V
V
80 ms Pulsed Load
120 Hz Rate
T
75
A
CC
= 25°C
= 12 V
V
CC
1.2
100
= 12 V
125
1.4