ISL9V3040P3_Q Fairchild Semiconductor, ISL9V3040P3_Q Datasheet

Motor / Motion / Ignition Controllers & Drivers Sgl N-Ch 400V

ISL9V3040P3_Q

Manufacturer Part Number
ISL9V3040P3_Q
Description
Motor / Motion / Ignition Controllers & Drivers Sgl N-Ch 400V
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of ISL9V3040P3_Q

Product
Electronic Ignition Drivers
Mounting Style
Through Hole
Package / Case
TO-220
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
Device Maximum Ratings
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARK
General Description
The
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
EcoSPARK
voltages. Contact your nearest Fairchild sales office for more
information.
Package
E
G
Symbol
E
BV
BV
SCIS150
V
I
T
SCIS25
ESD
E
T
I
C110
G
C25
GEM
P
ISL9V3040D3S,
T
STG
T
pkg
JEDEC TO-263AB
JEDEC TO-252AA
CER
ECS
E
D
L
J
®
D²-Pak
D-Pak
devices can be custom made to specific clamp
Collector to Emitter Breakdown Voltage (I
Emitter to Collector Voltage - Reverse Battery Condition (I
At Starting T
At Starting T
Collector Current Continuous, At T
Collector Current Continuous, At T
Gate to Emitter Voltage Continuous
Power Dissipation Total T
Power Dissipation Derating T
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
®
COLLECTOR
(FLANGE)
300mJ, 400V, N-Channel Ignition IGBT
ISL9V3040S3S,
J
J
= 25°C, I
= 150°C, I
JEDEC TO-220AB
JEDEC TO-262AA
SCIS
ISL9V3040P3,
SCIS
C
T
= 25°C
A
= 14.2A, L = 3.0 mHy
= 10.6A, L = 3.0 mHy
C
= 25°C unless otherwise noted
> 25°C
Parameter
C
C
E
= 25°C, See Fig 9
= 110°C, See Fig 9
C
E
G
C
and
G
C
= 1 mA)
Symbol
Formerly Developmental Type 49362
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at T
• Logic Level Gate Drive
• Qualified to AEC Q101
• RoHS Compliant
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009
GATE
C
= 10 mA)
R
R
1
2
J
= 25
-40 to 175
-40 to 175
o
Ratings
C
EMITTER
COLLECTOR
±10
430
300
170
150
300
260
1.0
24
21
17
November 2009
4
Units
W/°C
mJ
mJ
kV
°C
°C
°C
°C
W
V
V
A
A
V

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ISL9V3040P3_Q Summary of contents

Page 1

... Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s Max Lead Temp for Soldering (Package Body for 10s) pkg ESD Electrostatic Discharge Voltage at 100pF, 1500 ©2009 Fairchild Semiconductor Corporation Formerly Developmental Type 49362 ISL9V3040P3, and Applications • Automotive Ignition Coil Driver Circuits • Coil- On Plug Applications Features • ...

Page 2

... Current Rise Time-Resistive rR t Current Turn-Off Delay Time-Inductive d(OFF)L t Current Fall Time-Inductive fL SCIS Self Clamped Inductive Switching Thermal Characteristics R Thermal Resistance Junction-Case JC ©2009 Fairchild Semiconductor Corporation Package Reel Size TO-252AA 330mm TO-263AB 330mm TO-220AA Tube TO-262AA Tube TO-252AA Tube TO-263AB Tube T = 25° ...

Page 3

... Junction Temperature 1.0 2 COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage vs Collector Current ©2009 Fairchild Semiconductor Corporation 30 = 5V,V = 14V 25° SCIS Curves valid for 125 150 175 200 Figure 2. Self Clamped Inductive Switching 1.8 I 1.7 1.6 1 4. ...

Page 4

... Figure 9. DC Collector Current vs Case Temperature 10000 V 1000 100 300V CES 1 0.1 -50 - JUNCTION TEMPERATURE (°C) J Figure 11. Leakage Current vs Junction Temperature ©2009 Fairchild Semiconductor Corporation (Continued) 25 DUTY CYCLE < 0.5 175° 3.0 4.0 1.0 Figure 8. Transfer Characteristics 2 4.0V GE 2.0 1.8 1.6 1.4 1 ...

Page 5

... Figure 15. Breakdown Voltage vs Series Gate Resistance 0 10 0.5 0.2 0 0.05 0.02 0. SINGLE PULSE - Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case ©2009 Fairchild Semiconductor Corporation (Continued FREQUENCY = 1 MHz G(REF 175° 25°C J 100 R , SERIES GATE RESISTANCE (k ) ...

Page 6

... Test Circuit and Waveforms PULSE DUT GEN E Figure 17. Inductive Switching Test Circuit VARY t TO OBTAIN P REQUIRED PEAK Figure 19. Energy Test Circuit ©2009 Fairchild Semiconductor Corporation Figure 18 DUT - 0.01 Figure 20. Energy Waveforms ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, November 2009 R or LOAD DUT ...

Page 7

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FlashWriter Auto-SPM™ FPS™ Build it Now™ F-PFS™ CorePLUS™ FRFET CorePOWER™ ...

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