DS92LV222ATM National Semiconductor, DS92LV222ATM Datasheet - Page 2

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DS92LV222ATM

Manufacturer Part Number
DS92LV222ATM
Description
Manufacturer
National Semiconductor
Datasheet

Specifications of DS92LV222ATM

Number Of Elements
2
Number Of Receivers
2
Number Of Drivers
2
Input Type
CMOS
Operating Supply Voltage (typ)
3.3V
Differential Input High Threshold Voltage
100mV
Diff. Input Low Threshold Volt
-100mV
Output Type
Repeater
Differential Output Voltage
280mV
Transmission Data Rate
800Mbps
Propagation Delay Time
13ns
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Power Dissipation
970mW
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
16
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS92LV222ATM
Manufacturer:
NS
Quantity:
1 640
Part Number:
DS92LV222ATM
Manufacturer:
NS/国半
Quantity:
20 000
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Symbol
DIFFERENTIAL DRIVER CHARACTERISTICS
V
V
V
V
I
I
I
DIFFERENTIAL RECEIVER CHARACTERISTICS
V
V
I
DEVICE CHARACTERISTICS
V
V
I
I
V
OZD
OXD
OSD
IN
IH
IL
DC Electrical Characteristics
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
T
V
V
V
V
OD
OS
OD
OS
TH
TL
IH
IL
CL
Supply Voltage (V
Enable Input Voltage (DE)
Current Select Voltage
Receiver Select Voltage
Bus Pin Voltage (DO/RI
Driver Short Circuit Current
ESD (HBM 1.5 k , 100 pF)
Maximum Package Power Dissipation at 25˚C
A
OD
OS
OD
OS
(ISEL)
(RSEL)
SOIC
= −40˚C to +85˚C unless otherwise noted, V
Output Differential
Voltage
VOD Magnitude
Change
Offset Voltage
Offset Magnitude
Change
Output Differential
Voltage
VOD Magnitude
Change
Offset Voltage
Offset Magnitude
Change
TRI-STATE
Power-Off Leakage
Output Short Circuit
Current
Input Threshold High
Input Threshold Low
Input Current
Minimum Input High
Voltage
Maximum Input Low
Voltage
Input High Current
Input Low Current
Input Diode Clamp
Voltage
Parameter
CC
)
®
±
Leakage
)
−0.3V to (V
−0.3V to (V
−0.3V to (V
R
Isel = 0V
R
Isel = 3.3V
V
DE = 0
V
V
ISEL = V
V
V
= 3.6 V or 0 V
V
V
I
CLAMP
L
L
O
O
CC
O
IN
IN
IN
= 27
= 100
= V
= 2.9V or GND,
= 0V
= +2.9V, or 0V, V
= V
= GND or 0.4V
−0.3V to +3.9V
= 0V
Conditions
(Notes 1, 2)
CC
CC
= −18 mA
CC
Continuous
CC
CC
CC
CC
Figure 1
or GND,
970 mW
= 3.3V
or 2.4V
Figure 1
+ 0.3V)
+ 0.3V)
+ 0.3V)
>
6.0V
2 kV
±
0.3V (Notes 2, 3)
CC
2
Recommended Operating
Conditions
Supply Voltage (V
Receiver Input Voltage
Operating Free Air Temperature
above 25˚C
Storage Temperature Range
Lead Temperature
DO+,
DO−
RI+, RI−
DE0,
DE1,
RSEL,
ISEL0,
ISEL1
Derate SOIC Package
(Soldering, 4 sec.)
Pin
−100
GND
−1.5
Min
−10
170
250
1.0
0.9
2.0
CC
)
1.25
1.25
−0.8
Typ
−11
220
360
10
10
±
±
±
±
±
2
2
1
1
1
1
1
Min
−40
3.0
0.0
+100
Max
±
±
−13
+10
V
±
±
280
480
−65˚C to +150˚C
1.6
1.6
0.8
10
20
10
20
CC
10
10
10
10
Max Units
+85
3.6
2.9
8mW/˚C
260˚C
Units
V
V
˚C
mV
mV
mV
mV
mV
mV
mA
mV
mV
µA
µA
µA
µA
µA
V
V
V
V
V

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