BU2008-E3/51 General Semiconductor / Vishay, BU2008-E3/51 Datasheet - Page 4

• Manufacturer Part Number: BU2008-E3/51
• Description: Bridge Rectifier, Single-Phase; 20A, 800V, BU 4-Pin Inline Pkg., RoHS
• Manufacturer: General Semiconductor / Vishay

Specifications of BU2008-E3/51

• Capacitance, Junction: 95 pF
• Configuration: Single Phase
• Current Squared Time Rating: 239
• Current, Forward: 20 A
• Current, Reverse: 110 μA
• Current, Surge: 240 A
• Package Type: BU
• Primary Type: Bridge Rectifier
• Resistance, Thermal, Junction To Case: 2.4 °C/W
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Voltage, Forward: 0.85 V
• Voltage, Reverse: 800 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

FORMING SPECIFICATION: BU-5S in inches (millimeters)
APPLICATION NOTE
(1) Device UL approved for safety use dielectric strength of 1500 V.
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
(3) Heat sink shape recommendation:
0.080 (2.03)
0.060 (1.52)
0.050 (1.27)
0.040 (1.02)
0.125 (3.2) x 45°
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
Chamfer
2.5 mm MIN.
By Safety Requirements
+
(1.9) R
0.075
0.080 (2.03)
0.065 (1.65)
0.880 (22.3)
0.860 (21.8)
~ ~
0.160 (4.1)
0.140 (3.5)
0.319 (8.10)
0.272 (6.90)
-
0.100 (2.54)
0.085 (2.16)
0.319 (8.10)
0.272 (6.90)
0.020R (TYP.)
0.085 (2.16)
0.065 (1.65)
0.310 (7.9)
0.290 (7.4)
(3)
0.134 (3.40)
0.087 (2.20)
Vishay General Semiconductor
0.219 (5.55)
MAX.
2.5 mm MIN.
BU2006 thru BU2010
0.161 (4.10)
0.142 (3.60)
Heatsink
0.315 (8.0)
0.276 (7.0)
TYP.
TYP.
0.024 (0.62)
0.020 (0.52)
9°
5°
0.740 (18.8)
0.720 (18.3)
5