MT46H8M32LFB5-75 IT:A Micron Technology Inc, MT46H8M32LFB5-75 IT:A Datasheet - Page 64
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MT46H8M32LFB5-75 IT:A
Manufacturer Part Number
MT46H8M32LFB5-75 IT:A
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H8M32LFB5-75_ITA.pdf
(96 pages)
Specifications of MT46H8M32LFB5-75 IT:A
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
120mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant
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Figure 27: READ-to-WRITE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQ
DQ
DQS
DQS
CK#
CK#
DM
DM
CK
CK
3,4
3,4
Notes:
READ
Bank,
Col n
READ
Bank,
Col n
T0
T0
1. BL = 4 in the cases shown (applies for bursts of 8 and 16 as well; if BL = 2, the BST com-
2. BST = BURST TERMINATE command; page remains open.
3. D
4. D
5. Shown with nominal
6. CKE = HIGH.
1
1
mand shown can be NOP).
OUT
IN
b = data-in from column b.
n = data-out from column n.
CL = 2
BST
BST
T1
T1
2
2
CL = 3
T1n
D
t
AC,
OUT
NOP
T2
NOP
T2
t
64
DQSCK, and
D
T2n
T2n
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE
NOP
Bank,
Col b
T3
T3
t
DQSQ.
1
D
t
(NOM)
OUT
DQSS
T3n
T3n
Don’t Care
WRITE
Bank,
Col b
T4
D
T4
NOP
IN
1
t
(NOM)
DQSS
T4n
T4n
D
IN
Transitioning Data
©2008 Micron Technology, Inc. All rights reserved.
READ Operation
D
T5
D
T5
NOP
NOP
IN
IN
T5n
D
T5n
D
IN
IN
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