MT47H32M16HR-187E:G Micron Technology Inc, MT47H32M16HR-187E:G Datasheet - Page 9

• Manufacturer Part Number: MT47H32M16HR-187E:G
• Description: IC DDR2 SDRAM 512MBIT 84FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H32M16HR-187E:G

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 1.875ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-TFBGA
• Lead Free Status / Rohs Status: Compliant

State Diagram
Figure 2: Simplified State Diagram
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Setting
default
EMRS
MRS
OCD
Note:
WRITE
precharge
WRITE A
Writing
Writing
(E)MRS
with
auto
1. This diagram provides the basic command flow. It is not comprehensive and does not
identify all timing requirements or possible command restrictions such as multibank in-
teraction, power down, entry/exit, etc.
power-
Active
down
Automatic Sequence
Command Sequence
WRITE
PRE
Initialization
precharged
Precharging
sequence
PRE, PRE_A
Activating
all banks
active
Bank
Idle
ACT
9
READ
ACT = ACTIVATE
CKE_H = CKE HIGH, exit power-down or self refresh
CKE_L = CKE LOW, enter power-down
(E)MRS = (Extended) mode register set
PRE = PRECHARGE
PRE_A = PRECHARGE ALL
READ = READ
READ A = READ with auto precharge
REFRESH = REFRESH
SR = SELF REFRESH
WRITE = WRITE
WRITE A = WRITE with auto precharge
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Precharge
power-
down
512Mb: x4, x8, x16 DDR2 SDRAM
precharge
Reading
READ A
Reading
with
auto
REFRESH
refreshing
CKE_L
Self
READ
CKE_L
Refreshing
© 2004 Micron Technology, Inc. All rights reserved.
State Diagram