HT12 Taiwan Semiconductor, HT12 Datasheet - Page 2

• Manufacturer Part Number: HT12
• Description: Rectifiers 1.0 Amp 100 Volt 30 Amp IFSM
• Manufacturer: Taiwan Semiconductor

Specifications of HT12

• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1 V
• Recovery Time: 50 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Package / Case: TS-1
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: R0

2.0
1.0
0
35
25
20
40
30
15
10
70
60
50
40
30
20
10
0
0
0
1
FIG.1- MAXIMUM FORWARD CURRENT DERATING
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
FIG.4- TYPICAL JUNCTION CAPACITANCE
0.1
CURVE
25
SURGE CURRENT
2
0.5
50
NONINDUCTIVE
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
RATINGS AND CHARACTERISTIC CURVES (HT11 THRU HT18)
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1
50
REVERSE VOLTAGE. (V)
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE. ( C)
2
5
2. Rise Time=10ns max. Sourse Impedance=
75
1 megohm 22pf
50 ohms
5
NON
INDUCTIVE
DUT
10
10
NONINDUCTIVE
10
100
8.3ms Single Half Sine Wave
JEDEC Method
20
OSCILLOSCOPE
(NOTE 1)
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
20
50
125
O
100 200
150
50
PULSE
GENERATOR
(NOTE 2)
500 1000
175
100
(-)
(+)
+0.5A
-0.25A
-1.0A
0.001
1000
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
0.01
0.1
0
1.0
0.1
10
10
1
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
0
FIG.5- TYPICAL INSTANTANEOUS
0
20
0.2
trr
FORWARD CHARACTERISTICS
1cm
Tj=25 C
SET TIME BASE FOR
5/ 10ns/ cm
40
0.4
0
FORWARD VOLTAGE. (V)
Tj=75 C
Tj=100 C
60
0.6
0
0
80
0.8
100
1.0
Version: A06
120
1.2
140
1.4