STM32L152R8H6 STMicroelectronics, STM32L152R8H6 Datasheet - Page 106
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STM32L152R8H6
Manufacturer Part Number
STM32L152R8H6
Description
16/32-BITS MICROS
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32L152-EVAL.pdf
(107 pages)
Specifications of STM32L152R8H6
Core
ARM Cortex M3
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
32MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
51
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 3.6 V
Data Converters
A/D 20x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TFBGA
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32L152R8H6
Manufacturer:
TI
Quantity:
397
Company:
Part Number:
STM32L152R8H6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Revision history
106/107
Table 65.
25-Feb-2011
Date
Document revision history (continued)
Revision
cont’d
4
Updated
Standby mode
Table 20: Typical and maximum timings in Low power
condition for Wakeup from Stop mode, regulator in Run mode; updated
max values for Wakeup from Stop mode, regulator in low power mode;
updated max values for t
Table 21: Peripheral current
Low power sleep and run; updated Flash values; renamed ADC1 to
ADC; updated I
and I
ADC.
Table 22: High-speed external user clock
value for t
t
values.
Table 23: Low-speed external user clock
value for I
Table 24: HSE 1-24 MHz oscillator
and updated max value; updated max values for I
Table 25: LSE oscillator characteristics (fLSE = 32.768
max value for I
Table 26: HSI oscillator
values for ACC
Table 28: MSI oscillator
max values for D
Table 31: Flash memory
Table 39: I/O AC
and 11; updated min value; updated footnotes.
Table 50: ADC
conditions for ENOB, SINAD, SNR, and THD.
Table 52: DAC
8.
Updated leakage value in
the
Added
supply pin during ADC
Added
Figure 28: Power supply and reference decoupling (VREF+ not
connected to
capacitors.
Figure 29: Power supply and reference decoupling (VREF+ connected
to
r(HSE)
VDDA): replaced 10 nF capacitor with 100 nF capacitor.
ADC.
Doc ID 17659 Rev 4
DD (IWDG)
/t
Figure 27: Maximum dynamic current consumption on VREF+
Table 51: RAIN max for fADC = 16 MHz(1)
f(HSE)
Table 19: Typical and maximum current consumptions in
w(HSE)
L
.
OSC_IN rise or fall time; updated I
VDDA): replaced all 10 nF capacitors with 100 nF
; updated footnote 1 and 3; added foot note 2 concerning
LSE
HSI
characteristics: updated footnote 7 and added footnote
(I
accuracy: updated typ values and some of the test
DD (LCD)
/t
DD
VOLT(MSI)
characteristics: updated some max values for 01, 10,
w(HSE)
.
.
(WU from Standby) instead of (I
conversion.
value; updated units; added values for I
characteristics: updated some min and max
characteristics: updated parameter, typ, and
OSC_IN high or low time; added max value for
WUSTDBY
characteristics: updated typ values for t
.
Figure 26: Typical connection diagram using
consumption: updated values for column
Changes
.
characteristics: renamed i
STM32L151xx, STM32L152xx
characteristics: updated max
characteristics: added min
L
DD(HSE)
for typ and max
DD
modes: updated
(WU from Stop).
kHz): updated
.
2
as I
DD (RTC)
prog
HSE
.