SST5486-E3 Vishay, SST5486-E3 Datasheet - Page 7

• Manufacturer Part Number: SST5486-E3
• Description: TRANSISTOR,JFET,N-Channel,8mA,TO-236AB
• Manufacturer: Vishay

Specifications of SST5486-E3

• Power Dissipation Pd: 350mW
• Transistor Polarity: N Channel
• Current Rating: 10mA
• Continuous Drain Current Id: 20mA
• Gate-source Breakdown Voltage: -25V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Gate-source Cutoff Voltage: -6V

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70246.
S-50148—Rev. G, 24-Jan-05
Document Number: 70246
TYPICAL CHARACTERISTICS (T
20
16
12
8
4
0
10
Equivalent Input Noise Voltage vs. Frequency
V
I
GS(off)
D
= I
DSS
= −3 V
100
f − Frequency (Hz)
1 k
I
D
V
= 5 mA
DS
10 k
= 10 V
A
= 25_C UNLESS OTHERWISE NOTED)
100 k
20
16
12
8
4
0
0.1
V
Output Conductance vs. Drain Current
GS(off)
= −3 V
125_C
T
A
= −55_C
I
D
2N/SST5484 Series
− Drain Current (mA)
1
Vishay Siliconix
25_C
V
f = 1 kHz
DS
= 10 V
www.vishay.com
10
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