GBPC608-E4/1 Vishay, GBPC608-E4/1 Datasheet - Page 3

GBPC608-E4/1

Manufacturer Part Number
GBPC608-E4/1
Description
Manufacturer
Vishay
Datasheet

Specifications of GBPC608-E4/1

Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
800V
Rms Voltage (max)
560V
Peak Non-repetitive Surge Current (max)
175A
Avg. Forward Curr (max)
6A
Rev Curr
5uA
Forward Voltage
1V
Package Type
Case GBPC6
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Screw
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88613
Revision: 15-Apr-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
A
40
= 125 °C
1.0
T
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
= 100 °C
For technical questions within your region, please contact one of the following:
T
J
= 25 °C
1.2
60
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.4
Polarity shown on side of case: Positive lead by beveled corner
80
Hole For #6 Screw
0.630 (16.00)
0.590 (14.98)
0.158 (4.01)
0.142 (3.61)
1.6
0.042 (1.07)
0.038 (0.96)
0.200 (5.08)
0.160 (4.06)
0.128 (3.25)
0.048 (1.22)
100
1.8
DIA.
DIA.
Case Style GBPC6
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
AC
0.040 (1.02) TYP.
AC
0.094 (2.4) x 45°
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
0.445 (11.30)
0.405 (10.29)
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
0.750 (19.05)
GBPC6005 thru GBPC610
Vishay General Semiconductor
MIN.
50 - 400 V
600 - 1000 V
0.1
t - Heating Time (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
www.vishay.com
100
100
3

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