MT16JTF25664HZ-1G6G1 Micron Technology Inc, MT16JTF25664HZ-1G6G1 Datasheet - Page 10

• Manufacturer Part Number: MT16JTF25664HZ-1G6G1
• Description: MICMT16JTF25664HZ-1G6G1 DDR3 SODIMM 2GB
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT16JTF25664HZ-1G6G1

• Memory Type: DDR3 SDRAM
• Memory Size: 2GB
• Speed: 1600MT/s
• Features: -
• Package / Case: 204-SODIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8: Absolute Maximum Ratings
Table 9: Operating Conditions
PDF: 09005aef837cdd2d
jtf16c256_512x64az.pdf – Rev. D 5/11 EN
Symbol Parameter
V
Symbol
I
V
I
V
VREF
IN
I
VTT
T
T
OZ
I
DD
V
TT
A
, V
I
C
DD
OUT
V
Termination reference current from V
Termination reference voltage – command address bus 0.483 x V
Input leakage current;
Any input 0V ≤ V
V
(All other pins not under test = 0V)
Output leakage current;
0V ≤ V
disabled
V
Module ambient operating tempera-
ture
DDR3 SDRAM component case oper-
ating temperature
DD
REF
REF
Parameter
V
Voltage on any pin relative to V
supply voltage
DD
input 0V ≤ V
leakage current; V
OUT
supply voltage relative to V
Notes:
≤ V
DDQ
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
IN
IN
; DQs and ODT are
1. V
2. T
3. For further information, refer to technical note TN-00-08: ”Thermal Applications,”
4. The refresh rate is required to double when 85°C < T
≤ V
≤ 0.95V
and address signals’ voltage margin and will reduce timing margins.
available on Micron’s Web site.
DD
REF
A
TT
;
and T
termination voltage in excess of the stated limit will adversely affect the command
= valid V
C
are simultaneous requirements.
SS
SS
REF
TT
level
Address inputs
RAS#, CAS#,
WE#, BA
S#, CKE, ODT,
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1.425
–600
Min
–32
–16
–10
–16
–40
–40
–4
0
0
DD
0.5 x V
Nom
1.5
–
0
0
0
0
0
–
–
–
–
C
Electrical Specifications
≤ 95°C.
DD
Min
–0.4
–0.4
0.517 x V
© 2008 Micron Technology, Inc. All rights reserved.
1.575
Max
600
32
16
10
16
70
85
85
95
4
DD
1.975
1.975
Max
Units Notes
mA
µA
µA
µA
°C
°C
°C
°C
V
V
Units
2, 3, 4
V
V
2, 3
1