SST4118-E3 Vishay, SST4118-E3 Datasheet - Page 5

• Manufacturer Part Number: SST4118-E3
• Description: TRANSISTOR,JFET,N-Channel,80uA,TO-236
• Manufacturer: Vishay

Specifications of SST4118-E3

• Power Dissipation Pd: 350mW
• Transistor Polarity: N Channel
• Current Rating: 50mA
• Continuous Drain Current Id: 240µA
• Gate-source Breakdown Voltage: -40V
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Gate-source Cutoff Voltage: -3V

TYPICAL CHARACTERISTICS (T
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
0.5
0.4
0.3
0.2
0.1
0
2
1
0
Common-Source Reverse Feedback Capacitance
0.01
0
T
Output Conductance vs. Drain Current
A
V
= −55_C
f = 1 MHz
GS(off)
−4
V
V
vs. Gate-Source Voltage
GS
= −2.5 V
DS
125_C
I
D
− Gate-Source Voltage (V)
= 0 V
− Drain Current (mA)
10 V
−8
0.1
25_C
−12
V
f = 1 kHz
DS
= 10 V
−16
A
= 25_C UNLESS OTHERWISE NOTED)
−20
1
200
160
120
20
16
12
80
40
0
8
4
0
0.01
10
Equivalent Input Noise Voltage vs. Frequency
2N/PN/SST4117A Series
V
T
DS
A
= 25_C
On-Resistance vs. Drain Current
= 10 V
V
GS
100
I
D
= 0 V
= 10 mA
I
D
f − Frequency (Hz)
− Drain Current (mA)
V
Vishay Siliconix
GS(off)
0.1
1 k
= −0.7 V
−2.5 V
www.vishay.com
10 k
100 k
1
5