FDMC7678 Fairchild Semiconductor, FDMC7678 Datasheet - Page 4

• Manufacturer Part Number: FDMC7678
• Description: MOSFET Power 30V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMC7678

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.3 mOhms
• Forward Transconductance Gfs (max / Min): 90 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 17.5 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MLP 3.3 x 3.3
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMC7678 Rev. C1
Typical Characteristics
0.01
100
0.1
10
30
10
10
0.001
8
6
4
2
0
1
1
Figure 7.
0.01
0
I
THIS AREA IS
LIMITED BY r
D
SINGLE PULSE
T
R
T
Figure 9.
J
A
θ
= 17.5 A
Figure 11. Forward Bias Safe
JA
= MAX RATED
= 25
= 125
5
0.01
V
o
Switching Capability
C
DS
0.1
Gate Charge Characteristics
t
o
AV
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
DS(on)
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
g
10
, GATE CHARGE (nC)
0.1
1
15
T
J
= 125
V
V
DD
T
DD
1
J
= 10 V
T
o
= 25°C unless otherwise noted
= 20 V
J
20
C
= 25
10
V
T
o
DD
C
J
10
= 100
= 15 V
25
10 s
100
1 ms
10 ms
100 ms
1 s
DC
o
μ
100200
C
s
100
30
4
2000
1000
3000
1000
100
100
0.5
Figure 10.
10
70
60
50
40
30
20
10
30
1
0
10
0.1
25
Figure 12.
-4
Limited by Package
Figure 8.
f = 1 MHz
V
Current vs Case Temperature
SINGLE PULSE
R
T
GS
A
θ
JA
= 25
10
= 0 V
= 125
-3
V
50
o
DS
Maximum Continuous Drain
Power Dissipation
C
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
o
C/W
Single Pulse Maximum
Capacitance vs Drain
C
10
, C
t, PULSE WIDTH (sec)
-2
ASE TEMPERATURE (
V
GS
75
1
10
= 4.5 V
-1
1
100
V
GS
= 10 V
R
10
θ
o
JC
C )
125
= 4.0
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10
100
C
C
C
oss
o
rss
iss
C/W
1000
150
30