VN3205N6 Supertex, VN3205N6 Datasheet - Page 3

• Manufacturer Part Number: VN3205N6
• Description: MOSFET Power 50V 0.3Ohm
• Manufacturer: Supertex

Specifications of VN3205N6

• Configuration: Quad
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: PDIP-14
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: In Transition

Typical Performance Curves
1.0
0.1
.01
20
16
12
10
8
4
0
5
4
3
2
1
0
0
0
0
Maximum Rated Safe Operating Area
Transconductance vs. Drain Current
V
TO-92 (DC)
T
10
DS
2
C
= 25°C
Output Characteristics
= 25V
P-DIP (DC)
TO-92 (pulsed)
P-DIP (pulsed)
1
I
D
V
V
20
(amperes)
4
DS
DS
(volts)
(volts)
TO-243AA (DC)
30
6
T
A
10
= -55°C
125°C
TO-243AA
25°C
40
8
(pulsed)
V
GS
=
100
50
10
10V
8V
6V
4V
3V
3
2.0
1.6
1.2
0.8
0.4
1.0
0.8
0.6
0.4
0.2
20
16
12
0
8
4
0
0
0.001
0
0
TO-92
P-DIP
TO-243AA (T A = 25°C)
Power Dissipation vs. Temperature
Thermal Response Characteristics
25
2
Saturation Characteristics
0.01
TO-243AA
T
P
50
A
D
= 25°C
= 1.6W
t
p
V
4
DS
(seconds)
T
C
0.1
75
(volts)
(°C)
6
100
1.0
TO-92
P
T
C
D
8
125
= 25°C
= 1W
V
GS
=
150
10
10
10V
8V
6V
4V
3V
VN3205