TSM1N60SCT Taiwan Semiconductor

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TSM1N60SCT

Manufacturer Part Number

TSM1N60SCT

Description

MOSFET Power 600V 1.0A 3.0W

Manufacturer

Taiwan Semiconductor

Specifications of TSM1N60SCT

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

13 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

0.3 A

Power Dissipation

3 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

Other names

A3

Related parts for TSM1N60SCT

Related keywords

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