FDS6676S Fairchild Semiconductor, FDS6676S Datasheet
FDS6676S
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FDS6676S Summary of contents
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... FDS6676S 30V N-Channel PowerTrench SyncFET General Description The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. The FDS6676S includes DS(ON) an integrated Schottky ...
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... Min Typ Max Units mV/ C 500 A 100 nA –100 –3.8 mV/ C 5.25 7.5 m 6.0 9.0 8 4665 pF 826 pF 304 pF 1 131 390 700 mV 490 125°/W when mounted on a minimum pad. See “SyncFET Schottky body diode characteristics” below FDS6676S Rev F1 (W) ...
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... Figure 4. On-Resistance Variation with 100 125 A 1 0.1 0. 0.001 2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.0V 3.5V 4.5V 10V DRAIN CURRENT ( 7 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6676S Rev F1 ( 0.8 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 °C Duty Cycle 100 1000 FDS6676S Rev F1 (W) 30 1000 ...
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... SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6676S. TIME : 12.5ns/div typ t : 31ns RR typ ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...