STP11NB40 STMicroelectronics, STP11NB40 Datasheet - Page 9

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STP11NB40

Manufacturer Part Number
STP11NB40
Description
MOSFET Power N-Ch 400 Volt 11 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of STP11NB40

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10.7 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
No

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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