FDMS86105 Fairchild Semiconductor, FDMS86105 Datasheet - Page 4

• Manufacturer Part Number: FDMS86105
• Description: MOSFET Power 100V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86105

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 A
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 6 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power-56
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS86105 Rev.C
Typical Characteristics
0.01
0.1
30
10
40
10
10
0.001
1
8
6
4
2
0
Figure 7.
1
0.01
0
Figure 9.
I
Figure 11. Forward Bias Safe
D
= 6 A
THIS AREA IS
LIMITED BY r
V
Switching Capability
0.1
DS
Gate Charge Characteristics
0.01
t
SINGLE PULSE
T
R
T
, DRAIN to SOURCE VOLTAGE (V)
AV
2
Operating Area
J
A
θ
Unclamped Inductive
JA
, TIME IN AVALANCHE (ms)
= MAX RATED
= 25
Q
g
= 125
, GATE CHARGE (nC)
DS(on)
o
C
V
o
1
C/W
DD
T
0.1
= 25 V
J
4
T
= 125
J
V
= 25
T
DD
J
o
10
= 50 V
= 25 °C unless otherwise noted
C
o
C
T
J
= 100
1
6
V
o
DD
100
C
= 75 V
100
1 ms
10 ms
10 s
100 ms
1 s
DC
μ
s
500
10
8
4
1000
1000
100
100
0.5
30
25
20
15
10
10
Figure 10.
10
5
0
1
1
10
0.1
25
Figure 12.
-4
Figure 8.
SINGLE PULSE
R
T
f = 1 MHz
V
Current vs Case Temperature
R
A
θ
GS
JA
θ
= 25
JC
10
= 0 V
= 125
= 2.6
-3
V
50
o
DS
C
Maximum Continuous Drain
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
o
o
C/W
C
10
C/W
Single Pulse Maximum
Capacitance vs Drain
,
t, PULSE WIDTH (sec)
CASE TEMPERATURE (
-2
1
V
GS
75
10
= 6 V
-1
1
100
10
V
GS
10
o
C )
= 10 V
125
V
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GS
100
= 10 V
C
C
C
oss
iss
rss
1000
100
150