NVTFS5826NLTAG ON Semiconductor, NVTFS5826NLTAG Datasheet - Page 4

• Manufacturer Part Number: NVTFS5826NLTAG
• Description: MOSFET Power Single N-Channel 60V,20A,24mohm
• Manufacturer: ON Semiconductor

Specifications of NVTFS5826NLTAG

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 24 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 20 A
• Power Dissipation: 22 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: WDFN-8
• Lead Free Status / Rohs Status: Details

1000.0
100.0
1000
1200
1000
10.0
100
800
600
400
200
1.0
0.1
10
0
1
0.1
1
0
C
Figure 9. Resistive Switching Time Variation
rss
V
I
V
V
Single Pulse
T
R
Thermal Limit
Package Limit
D
Figure 11. Maximum Rated Forward Biased
C
DD
GS
GS
DS(on)
= 10 A
C
= 25°C
oss
= 48 V
= 4.5 V
= 10 V
V
10
t
DS
t
C
Figure 7. Capacitance Variation
r
f
DRAIN−TO−SOURCE VOLTAGE (V)
Limit
iss
, DRAIN−TO−SOURCE VOLTAGE (V)
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
1 ms
20
1
10 ms
100 ms
30
10
10 ms
40
10
TYPICAL CHARACTERISTICS
V
T
GS
J
50
= 25°C
= 0 V
http://onsemi.com
t
t
d(off)
d(on)
dc
60
100
100
4
10
40
30
20
10
20
15
10
8
6
4
2
0
0
5
0
25
0.5
0
Figure 10. Diode Forward Voltage vs. Current
Q
V
T
Figure 8. Gate−to−Source Voltage vs. Total
Figure 12. Maximum Avalanche Energy vs.
GS
J
T
gs
J
= 25°C
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
50
SD
Starting Junction Temperature
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
4
g
, TOTAL GATE CHARGE (nC)
Q
gd
75
0.7
Charge
100
Q
8
T
0.8
125
12
V
I
D
T
I
DS
D
0.9
J
= 20 A
150
= 10 A
= 25°C
= 48 V
1.0
175
16