NVTFS5116PLTAG ON Semiconductor, NVTFS5116PLTAG Datasheet - Page 2
![MOSFET Power Single P-Channel 60V,14A,52mohm](/photos/30/99/309910/wdfn-8_sml.jpg)
NVTFS5116PLTAG
Manufacturer Part Number
NVTFS5116PLTAG
Description
MOSFET Power Single P-Channel 60V,14A,52mohm
Manufacturer
ON Semiconductor
Specifications of NVTFS5116PLTAG
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
52 mOhms
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
- 60 V
Continuous Drain Current
- 14 A
Power Dissipation
21 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
WDFN-8
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NVTFS5116PLTAG
Manufacturer:
ON Semiconductor
Quantity:
1 200
Part Number:
NVTFS5116PLTAG
Manufacturer:
ON/安森美
Quantity:
20 000
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES AND CAPACITANCES
DRAIN−SOURCE DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
V
Symbol
V
Q
Q
R
Q
J
(BR)DSS
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
Q
DS(on)
C
C
V
g
d(on)
d(off)
= 25°C unless otherwise noted)
DSS
GSS
G(TH)
t
RR
t
t
FS
oss
t
t
rss
GS
GD
SD
RR
iss
a
b
r
f
http://onsemi.com
V
V
V
V
V
V
V
GS
V
V
GS
I
DS
GS
GS
GS
GS
V
V
S
V
V
GS
DS
V
GS
GS
GS
GS
= −7 A
= 0 V, dI
DS
= −4.5 V, V
= 60 V
= −4.5 V, V
= −10 V, V
= 0 V,
= 0 V,
Test Condition
= 0 V, V
= V
= −4.5 V, I
= 0 V, f = 1.0 MHz,
= 0 V, I
= −10 V, I
V
= 15 V, I
2
DS
I
I
I
I
DS
D
D
D
S
= −7 A
= −7 A
= −7 A
= −7 A
, I
= −25 V
S
/dt = 100 A/ms,
GS
D
D
DS
DS
= −250 mA
D
DS
= 250 mA
D
D
= "20 V
= −5 A
= −48 V,
= −7 A
= −48 V,
= −7 A
T
= −48 V,
T
T
T
J
J
J
J
= 125°C
= 125°C
= 25°C
= 25°C
Min
−60
−1
−0.79
−0.64
1258
Typ
127
37
51
11
84
14
25
14
68
24
36
21
16
24
1
4
8
5
"100
−1.20
Max
−1.0
−10
−3
52
72
Unit
mW
nA
nC
nC
nC
nC
mA
pF
ns
ns
V
V
S
V