SUP18N15-95 Vishay, SUP18N15-95 Datasheet - Page 5

• Manufacturer Part Number: SUP18N15-95
• Description: MOSFET Power 150V 18A 88W
• Manufacturer: Vishay

Specifications of SUP18N15-95

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No RoHS Version Available

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 71642
S-71662-Rev. B, 06-Aug-07
0.01
20
15
10
0.1
5
0
2
1
0
10
http://www.vishay.com/ppg?71642.
- 4
0.1
Duty Cycle = 0.5
0.2
25
Maximum Avalanche Drain Current
Single Pulse
0.05
T
50
vs. Case Temperature
C
- Case Temperature (°C)
0.02
75
10
100
- 3
Normalized Thermal Transient Impedance, Junction-to-Case
125
150
175
Square Wave Pulse Duration (sec)
10
- 2
100
0.1
10
1
10
0.1
- 1
Limited by r
V
DS
DS(on)
1
Single Pulse
T
Safe Operating Area
- Drain-to-Source Voltage (V)
C
= 25 °C
SUP18N15-95
10
1
Vishay Siliconix
100
www.vishay.com
10 µs
100 µs
1 ms
10 ms
100 ms
1 s, DC
1000
10
5