FDMS3606AS Fairchild Semiconductor, FDMS3606AS Datasheet - Page 8

• Manufacturer Part Number: FDMS3606AS
• Description: MOSFET Power 30V Asymtrc Dual NCh PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3606AS

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms, 2.8 mOhms
• Forward Transconductance Gfs (max / Min): 61 S, 154 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A, 27 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 59 nC, 27 nC
• Minimum Operating Temperature: - 55
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0058ohm
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3606AS Rev.C4
Typical Characteristics (Q2 N-Channel)
0.01
10
50
10
200
100
0.1
1
8
6
4
2
0
10
0.01
Figure 20. Gate Charge Characteristics
1
0.01
0
I
Figure 22. Unclamped Inductive
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
D
J
A
θ
= 27A
Figure 24. Forward Bias Safe
JA
= MAX RATED
= 25
= 120
10
0.1
o
V
Switching Capability
C
DS
t
0.1
AV
o
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
, TIME IN AVALANCHE (ms)
Q
g
(
20
on
, GATE CHARGE (nC)
T
)
J
1
= 125
V
DD
V
T
DD
30
1
J
= 10 V
= 25
o
C
= 20 V
10
o
C
V
T
DD
40
J
= 100
= 15 V
10
100
o
C
50
1 ms
100 ms
10 ms
1s
DC
10s
100200
1000
60
T
J
8
= 25
o
C unless otherwise noted
1000
200
150
100
10000
100
50
1000
0.1
10
0
100
1
25
Figure 23. Maximun Continuous Drain
10
10
0.1
Figure 25. Single Pulse Maximum
-3
Limited by Package
Figure 21. Capacitance vs Drain
Current vs Case Temperature
f = 1 MHz
V
GS
10
= 0 V
50
-2
V
Power Dissipation
to Source Voltage
T
DS
V
C
GS
,
, DRAIN TO SOURCE VOLTAGE (V)
CASE TEMPERATURE (
t, PULSE WIDTH (sec)
= 4.5 V
10
-1
75
1
V
GS
1
= 10 V
100
SINGLE PULSE
R
T
10
A
θ
R
JA
= 25
θ
o
JC
C )
= 120
= 2
125
o
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C
100
o
o
10
C/W
C/W
C
C
C
oss
rss
iss
150
1000
30