SI3446DV-T1 Vishay, SI3446DV-T1 Datasheet - Page 4

• Manufacturer Part Number: SI3446DV-T1
• Description: MOSFET Power 20V 5.3A 2W
• Manufacturer: Vishay

Specifications of SI3446DV-T1

• Configuration: Single Quad Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

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4
Si3446DV
Vishay Siliconix
0.01
–0.0
–0.2
–0.4
–0.6
0.1
20
10
0.4
0.2
1
2
1
0.00
–50
10
–4
0.2
Duty Cycle = 0.5
0.1
0.05
0.02
–25
Source-Drain Diode Forward Voltage
0.25
Single Pulse
V
T
SD
J
= 150_C
0
– Source-to-Drain Voltage (V)
0.50
T
Threshold Voltage
J
– Temperature (_C)
25
10
0.75
50
–3
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
D
= 250 mA
75
1.00
T
J
= 25_C
100
1.25
_
125
S
10
1.50
150
–2
10
(
–1
0.10
0.08
0.06
0.04
0.02
0.00
25
20
15
10
)
5
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 5.3 A
V
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
DM
JM
– Gate-to-Source Voltage (V)
Single Pulse Power
0.10
– T
t
1
A
= P
2
1
Time (sec)
t
2
DM
Z
thJA
thJA
t
t
S-51451—Rev. C, 01-Aug-05
1
2
(t)
Document Number: 70715
3
= 62.5_C/W
1.00
4
10
10.00
5