SI4810DY-T1 Vishay, SI4810DY-T1 Datasheet
SI4810DY-T1
Specifications of SI4810DY-T1
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SI4810DY-T1 Summary of contents
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... Surface Mounted on FR4 Board sec. b. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70802 S-31062—Rev. F, 26-May- ( Ordering Information: D Si4810DY Si4810DY-T1 (with Tape and Reel 25_C UNLESS OTHERWISE NOTED) A Symbol T = 25_C 70_C 25_C 70_C 25_C ...
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... Si4810DY Vishay Siliconix MOSFET + SCHOTTKY SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current (MOSFET + Schottky) (MOSFET + Schottky) a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a a Schottky Diode Forward Voltage Schottky Diode Forward Voltage ...
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... Document Number: 70802 S-31062—Rev. F, 26-May- 3500 2800 2100 1400 700 1.6 1.4 1.2 1.0 0.8 0 Si4810DY Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C Gate-to-Source Voltage (V) GS Capacitance C (MOSFET) iss C (MOSFET + Schottky) oss C (MOSFET) rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si4810DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Reverse Current (Schottky 0 0. 0.001 0.0001 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...
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... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 70802 S-31062—Rev. F, 26-May- Square Wave Pulse Duration (sec) Si4810DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 80_C/W thJA ( ...