FDD6680S Fairchild Semiconductor, FDD6680S Datasheet
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FDD6680S
Manufacturer Part Number
FDD6680S
Description
MOSFET Power 30V N-Ch PowerTrench
Manufacturer
Fairchild Semiconductor
Specifications of FDD6680S
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
55 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-252AA
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
FDD6680S
30V N-Channel PowerTrench SyncFET
General Description
The FDD6680S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies.
maximize power conversion efficiency, providing a low
R
an
monolithic SyncFET technology.
the FDD6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6680A in parallel with a Schottky diode.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
DS(ON)
D
DC/DC converter
Motor Drives
J
DSS
GSS
D
, T
JC
JA
JA
Device Marking
integrated
STG
FDD6680S
and low gate charge. The FDD6680S includes
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
G
Schottky
This 30V MOSFET is designed to
S
TO-252
diode
– Continuous
– Pulsed
FDD6680S
Device
The performance of
Parameter
using
D
Fairchild’s
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 3)
(Note 1)
(Note 1)
™
Features
.
55 A, 30 V
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
Tape width
G
R
R
DS(ON)
DS(ON)
–55 to +150
16mm
Ratings
100
3.1
1.3
2.1
30
55
60
40
96
20
= 11 m @ V
= 17 m @ V
D
S
December 2000
GS
GS
= 10 V
= 4.5 V
FDD6680S Rev D(W)
2500 units
Quantity
Units
C/W
C/W
C/W
W
V
V
A
C