SI4965DY Vishay, SI4965DY Datasheet - Page 4

• Manufacturer Part Number: SI4965DY
• Description: MOSFET Power 8V 8A 2W
• Manufacturer: Vishay

Specifications of SI4965DY

• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: - 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 8 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

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4
Si4965DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.1
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
2
1
10
30
10
1
- 50
0.00
-4
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
10
Single Pulse
T
Threshold Voltage
I
D
J
0.4
-3
= 250 mA
- Temperature (_C)
25
T
J
= 150_C
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
10
0.8
T
-2
100
J
= 25_C
1.0
125
Square Wave Pulse Duration (sec)
150
1.2
10
-1
1
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
5
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
V
0.1
1
GS
10
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
P
- Gate-to-Source Voltage (V)
DM
JM
Single Pulse Power
- T
A
t
Time (sec)
2
1
I
= P
1
D
t
= 8.0 A
2
DM
Z
thJA
thJA
100
S-31989—Rev. B, 13-Oct-03
t
t
(t)
3
1
2
10
Document Number: 70826
= 93_C/W
4
100
600
600
5