DS14C89ATN National Semiconductor, DS14C89ATN Datasheet - Page 2

• Manufacturer Part Number: DS14C89ATN
• Description: IC LINE RCVR QUAD CMOS 14-DIP
• Manufacturer: National Semiconductor
• Type: Receiverr

Specifications of DS14C89ATN

• Number Of Drivers/receivers: 0/4
• Protocol: RS232
• Voltage - Supply: 4.5 V ~ 5.5 V
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *DS14C89ATN

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t
t
t
t
t
t
Symbol
PLH
PHL
SK
r
f
nw
V
V
V
I
V
V
I
IN
CC
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
AC Electrical Characteristics
Over recommended operating conditions, unless otherwise specified, C
Symbol
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.
Note 2: Derate N Package 12.1 mW/˚C, and M Package 8.5 mW/˚C above +25˚C.
Note 3: AC input waveforms for test purposes: t
Note 4: Under the power-off supply conditions it is assumed that the power supply potential drops to zero (0V) and is replaced by a low impedance or short circuit
to ground.
Over recommended operating conditions, unless otherwise specified
TH
TL
HY
OH
OL
V
Input Voltage
Receiver Output Voltage
Junction Temperature
Continuous Power Dissipation
Lead Temp.
CC
N Package
M Package
Input High Threshold
Input Low Threshold
Typical Input Hysteresis
Input Current
Output High Voltage
Output Low Voltage
Supply Current
Propagation Delay Low to High
Propagation Delay High to Low
Typical Propagation Delay Skew
Output Rise TIme
Output Fall Time
Pulse Width assumed to be Noise
Parameter
Parameter
@
+25˚C (Note 2)
r
V
V
V
V
V
V
V
V
V
V
(max)
I
No Load, V
= t
OUT
(V
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
−30V to +30V
f
CC
= 200 ns, V
= +25V
= −25V
= +3V
= −3V
= +15V
= −15V
= +3V
= −3V
= V
= V
GND−0.3V
= +3.2 mA
) +0.3V to
1513 mW
1063 mW
TL
TH
(Note 1)
+150˚C
(Note 3)
(min)
+6V
IN
IH
= 2.7V or 0.5V
Input Pulse Width ≥ 10 µs
Input Pulse Width ≥ 10 µs
= +3V, V
Conditions
V
V
(Note 4)
I
I
OUT
OUT
L
CC
CC
= −3V, f = 20 KHz.
2
ConditIons
= +4.5V to +5.5V
= 0V (Power-Off)
= −3.2 mA
= −20µA
Recommended Operating
Conditions
I
Storage Temp. Range
ESD Rating ≥ 1.8 kV, Typically ≥ 2 kV
(HMB, 1.5 kΩ, 100 pF)
V
Operating Free Air Temp. (T
= 50 pF
CC
(Soldering 4 seconds)
DS14C89A
(GND = 0V)
Min
−0.43
−2.14
−0.43
−3.6
0.43
2.14
0.43
Min
1.3
0.5
3.6
2.8
3.5
+4.5
Min
0
Typ
400
3.5
3.2
A
40
40
)
0.15
Typ
1.0
4.0
4.7
0.5
Max
+5.5
+75
−65˚C to +150˚C
Max
300
300
6.5
6.5
1.0
Max
−8.3
−1.0
−5.0
−1.0
900
2.7
1.9
8.3
1.0
5.0
1.0
0.4
Units
+260˚C
˚C
V
Units
Units
µs
µs
ns
ns
ns
µs
mA
mA
mA
mA
mA
mA
mA
mA
µA
V
V
V
V
V
V