STM32L151C8U6 STMicroelectronics, STM32L151C8U6 Datasheet - Page 71

• Manufacturer Part Number: STM32L151C8U6
• Description: Microcontrollers (MCU) 32-Bit Arm Cortex M3 64kb UltralowPower
• Manufacturer: STMicroelectronics
• Series: STM32r

Specifications of STM32L151C8U6

• Core: ARM Cortex M3
• Core Processor: ARM® Cortex-M3™
• Core Size: 32-Bit
• Speed: 32MHz
• Connectivity: I²C, IrDA, LIN, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, DMA, I²S, POR, PWM, WDT
• Number Of I /o: 37
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 4K x 8
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 16x12b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-UFQFN Exposed Pad
• Lead Free Status / Rohs Status: Details

STM32L151xx, STM32L152xx
6.3.10
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 34.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 35.
1. Based on characterization results, not tested in production.
V
V
Symbol Parameter
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
Peak level
Electrostatic discharge
voltage (human body model)
Electrostatic discharge
voltage (charge device model)
EMI characteristics
ESD absolute maximum ratings
Ratings
V
T
LQFP100 package
compliant with IEC
61967-2
A
DD
25 °C,
Conditions
3.3 V,
Doc ID 17659 Rev 4
T
to JESD22-A114
T
to JESD22-C101
A
A
0.1 to 30 MHz
30 to 130 MHz
130 MHz to 1GHz
SAE EMI Level
+25 °C, conforming
+25 °C, conforming
frequency band
Conditions
Monitored
range 3
voltage
Max vs. frequency range
4 MHz
2.5
18
15
Class Maximum value
3
2
II
Electrical characteristics
range 2
16 MHz
voltage
-6
5
4
2
2000
500
range 1
32 MHz
voltage
-7
-5
-7
1
(1)
dBµV
71/107
Unit
Unit
-
V