VN770P STMicroelectronics, VN770P Datasheet
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VN770P
Specifications of VN770P
Related parts for VN770P
VN770P Summary of contents
Page 1
... INTEGRATED CLAMPING CIRCUITS UNDER-VOLTAGE PROTECTION ESD PROTECTION DESCRIPTION The VN770P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology ...
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... VN770P BLOCK DIAGRAM 2/11 ...
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... INPUT 2 Input of Switch 2 (high-side switch) 12, 14, 15, 18 DRAIN 4 Drain of Switch 4 (low-side switch) 13 INPUT 4 Input of Switch 4 (low-side switch) 16 URCE 4 Source of Switch 4 (low-side switch) 20 URCE 2 Source of Switch 2 (high-side switch) 22 URCE 1 Source of Switch 1 (high-side switch) 26 URCE 3 Source of Switch 3 (low-side switch) VN770P FUNCT ION 3/11 ...
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... VN770P PROTECTION CIRCUITS DUAL HIGH SIDE SWITCH The simplest way to protect the device against a continuous reverse battery voltage (-26V insert a a small resistor between pin 2 (GND) and ground. The suggested resistance value is about 150 . In any case the maximum voltage drop on this resistor should not overcome 0.5V. ...
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... C Parameter o C Max Max Max Test Co nditio 0 DS OUT State 7 OUT VN770P Value Uni 2000 V Internally Limited W o -40 to 150 C o -55 to 150 C Value Unit Internally Clamped Internally Limited A -14 A 2000 V Internally Limited W o Internally Limited C o -55 to 150 C/W o ...
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... VN770P ELECTRICAL CHARACTERISTICS FOR DUAL HIGH SIDE SWITCH (continued) R Output internal i Im pedance SWITCHING Symbol Parameter t (^) Turn-on Delay Time Of d(on) Output Current t (^) Rise Time Of O utput r Current t (^) Turn-off Delay Time Of d(o ff) Output Current t (^) Fall Time O f Output f Current (di/dt) Turn-on Current Slope ...
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... C for battery voltage of 13V which produces a voltage drop of 0.5 V Test Co nditio Test Co nditio Test Co nditio ns VN770P Min. Typ . Max. Unit 5 180 500 2500 s Min. Typ . Max. Unit -0 200 A 250 500 A Min. Typ . Max. Unit 0 0.07 0.1 Min. Typ . Max. Unit 7/11 ...
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... VN770P ELECTRICAL CHARACTERISTICS FOR LOW SIDE SWITCHES (continued Forward fs Transconductance C Output Capacitance os s SWITCHING (**) Symbol Parameter t Turn-on Delay Time d Rise Time r t Turn-off Delay Time d Fall Time f t Turn-on Delay Time d Rise Time r t Turn-off Delay Time d Fall Time f (di/dt) Turn-on Current Slope ...
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... TYPICAL APPLICATION DIAGRAM VN770P 9/11 ...
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... VN770P SO-28 MECHANICAL DATA DIM. MIN. TYP 0.10 b 0.35 b1 0. 17.7 E 10.00 e 1.27 e3 16.51 F 7.40 L 0.40 S 10/11 mm MAX. MIN. 2.65 0.30 0.004 0.49 0.013 0.32 0.009 45 (typ.) 18.1 0.697 10.65 0.393 7.60 0.291 1.27 0.016 8 (max.) inch TYP. MAX. 0.104 ...
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... The ST logo is a registered trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. STMicroelectronics GROUP OF COMPANIES . VN770P 11/11 ...