SI1315DL-T1-GE3 Vishay, SI1315DL-T1-GE3 Datasheet - Page 7
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SI1315DL-T1-GE3
Manufacturer Part Number
SI1315DL-T1-GE3
Description
MOSFET P-CH 8V 900MA SC70-3
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI1315DL-T1-GE3.pdf
(11 pages)
Specifications of SI1315DL-T1-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
336 mOhm @ 800mA, 4.5V
Drain To Source Voltage (vdss)
8V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
800mV @ 250µA
Gate Charge (qg) @ Vgs
3.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
112pF @ 4V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Document Number: 71153
06-Jul-01
0.08
1
e
c
e
D
3
1
b
2
A
A
1
E
2
1
E
A
c
L
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5549
Dim
A
A
E
e
A
D
b
E
L
c
e
1
1
1
2
Min
0.90
0.80
0.25
0.10
1.80
1.80
1.15
1.20
0.10
–
Package Information
0.65BSC
7_Nom
Nom
2.00
2.10
1.25
1.30
0.20
–
–
–
–
–
Max
1.10
0.10
1.00
0.40
0.25
2.20
2.40
1.35
1.40
0.30
Vishay Siliconix
0.035
0.031
0.010
0.004
0.071
0.071
0.045
0.047
0.004
Min
–
0.026BSC
7_Nom
Nom
0.079
0.083
0.049
0.051
0.008
www.vishay.com
–
–
–
–
–
Max
0.043
0.004
0.039
0.016
0.010
0.087
0.094
0.053
0.055
0.012
1