NTTFS4929NTAG ON Semiconductor, NTTFS4929NTAG Datasheet - Page 6

• Manufacturer Part Number: NTTFS4929NTAG
• Description: MOSFET N-CH 30V 34A 8WDFN
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTTFS4929NTAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.6A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 920pF @ 15V
• Power - Max: 810mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 17 mOhms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 2.11 W
• Mounting Style: SMD/SMT
• Fall Time: 6.1 ns
• Gate Charge Qg: 8.8 nC
• Rise Time: 24 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1000
0.01
100
0.1
0.01
100
10
0.1
10
1
0.000001
1
0.1
R
Thermal Limit
Package Limit
0 V < V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
DS(on)
C
= 25°C
V
D = 0.5
DS
0.2
0.05
0.02
GS
Limit
0.01
0.1
, DRAIN−TO−SOURCE VOLTAGE (V)
SINGLE PULSE
0.00001
< 20 V
Safe Operating Area
1
0.0001
10
0.001
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
10 ms
100 ms
1 ms
10 ms
dc
http://onsemi.com
0.01
100
t, TIME (s)
6
16
18
14
12
10
8
6
4
2
0
0.1
25
Figure 12. Maximum Avalanche Energy vs.
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Starting Junction Temperature
50
1
75
10
100
100
I
125
D
= 18 A
1000
150