NTMS4917NR2G ON Semiconductor, NTMS4917NR2G Datasheet - Page 4

• Manufacturer Part Number: NTMS4917NR2G
• Description: MOSFET N-CH 30V 10.2A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMS4917NR2G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.1A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1054pF @ 25V
• Power - Max: 880mW
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 mOhms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 7.1 A
• Power Dissipation: 1.28 W
• Mounting Style: SMD/SMT
• Fall Time: 12 ns
• Gate Charge Qg: 15.6 nC
• Rise Time: 6.3 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

1500
1400
1300
1200
1000
1000
1000
1100
0.01
900
800
700
600
500
400
300
200
100
100
100
0.1
10
10
0
1
1
0
1
0.01
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
V
I
V
D
Single Pulse
T
GS
DD
C
= 1 A
= 25°C
V
V
= 10 V
= 15 V
5
DS
DS
Figure 7. Capacitance Variation
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
R
Thermal Limit
Package Limit
DS(on)
15
10
1
C
C
C
Limit
oss
rss
iss
20
t
d(off)
TYPICAL CHARACTERISTICS
V
T
10
J
GS
= 25°C
t
d(on)
= 0 V
25
http://onsemi.com
t
t
100 ms
10 ms
10 ms
r
f
1 ms
DC
100
100
30
4
2.0
1.5
1.0
0.5
10
35
30
25
20
15
10
8
6
4
2
0
0
5
0
0
0.50
25
Figure 10. Diode Forward Voltage vs. Current
Q1
Q
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
T
V
T
gs
J
J
GS
, STARTING JUNCTION TEMPERATURE (°C)
= 25°C
0.55
V
5
SD
= 0 V
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Q
Q2
gd
g
, TOTAL GATE CHARGE (nC)
0.60
10
75
QT
0.65
15
V
100
DS
0.70
20
I
D
V
I
T
D
J
GS
= 8 A
125
= 7.5 A
= 25°C
0.75
25
= 10 V
0.80
150
30