NTD4970NT4G ON Semiconductor, NTD4970NT4G Datasheet - Page 4

MOSFET N-CH 30V 38A DPAK

NTD4970NT4G

Manufacturer Part Number
NTD4970NT4G
Description
MOSFET N-CH 30V 38A DPAK
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of NTD4970NT4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
774pF @ 15V
Power - Max
1.38W
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
21 mOhms
Forward Transconductance Gfs (max / Min)
34 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
11.6 A
Power Dissipation
2.55 W
Mounting Style
SMD/SMT
Fall Time
5.7 ns
Gate Charge Qg
8.2 nC
Rise Time
27.6 ns
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD4970NT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD4970NT4G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NTD4970NT4G
Quantity:
3 000
19
18
17
16
15
14
13
12
10
50
40
30
20
10
11
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
9
8
7
0
0
3
−50
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
= 30 A
−25
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
V
4
= 10 V
DS
V
10 V thru 4.5 V
1
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, GATE−TO−SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
5
25
T
2
Temperature
J
6
= 25°C
Voltage
50
7
75
3
TYPICAL PERFORMANCE CURVES
100
8
V
125
I
T
4
D
GS
J
= 30 A
= 25°C
9
= 3.9 V
http://onsemi.com
3.6 V
3.3 V
2.7 V
3.0 V
150
10
5
175
4
10000
1000
100
21
20
19
18
17
16
15
14
13
12
10
11
50
40
30
20
10
10
9
8
7
0
10
1
5
Figure 4. On−Resistance vs. Drain Current and
T
V
Figure 6. Drain−to−Source Leakage Current
J
DS
= 25°C
= 10 V
15
V
V
Figure 2. Transfer Characteristics
DS
T
GS
10
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
= 125°C
2
20
T
I
D
J
, DRAIN CURRENT (A)
= 25°C
Gate Voltage
15
V
vs. Voltage
T
V
25
T
GS
T
J
J
GS
J
= 125°C
= 150°C
= 4.5 V
= 85°C
T
= 10 V
3
J
= −55°C
30
20
35
4
25
V
GS
40
= 0 V
45
30
5

Related parts for NTD4970NT4G