NTMFS4933NT1G ON Semiconductor, NTMFS4933NT1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS4933NT1G
• Description: MOSFET N-CH 30V 232A SO8 FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4933NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 62.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 10930pF @ 15V
• Power - Max: 950mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 mOhms
• Forward Transconductance Gfs (max / Min): 82 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 2.74 W
• Mounting Style: SMD/SMT
• Fall Time: 23 ns
• Gate Charge Qg: 62.1 nC
• Rise Time: 33 ns
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.0027
0.0025
0.0023
0.0021
0.0019
0.0017
0.0015
0.0013
0.0009
0.0007
0.0011
200
180
160
140
120
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
60
40
20
0
2
1
3.0
−50
0
Figure 3. On−Resistance vs. Gate−to−Source
I
V
D
GS
= 30 A
3.8 V to
Figure 5. On−Resistance Variation with
−25
10 V
4.0
= 10 V
Figure 1. On−Region Characteristics
V
V
DS
GS
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1
0
3.4 V
5.0
25
Temperature
6.0
Voltage
50
2
7.0
75
TYPICAL CHARACTERISTICS
8.0
100
3
V
GS
T
I
T
D
J
J
9.0
http://onsemi.com
2.8 V
2.6 V
2.4 V
2.2 V
= 30 A
= 25°C
= 3.2 V
= 25°C
3.0 V
125
10
150
4
4
100000
0.0018
0.0017
0.0016
0.0015
0.0014
0.0013
0.0012
0.0010
0.0009
0.0008
0.0011
10000
1000
220
200
180
160
140
120
100
100
80
60
40
20
10
0
20
1
5
Figure 4. On−Resistance vs. Drain Current and
V
T
J
DS
V
Figure 6. Drain−to−Source Leakage Current
= 25°C
GS
= 10 V
40
V
Figure 2. Transfer Characteristics
= 0 V
1.5
DS
10
, DRAIN−TO−SOURCE VOLTAGE (V)
T
60
J
I
D
= 25°C
, DRAIN CURRENT (A)
2
T
Gate Voltage
J
15
T
V
V
80
vs. Voltage
= 125°C
T
T
J
GS
GS
J
J
= 150°C
= 125°C
= 85°C
= 4.5 V
= 10 V
2.5
100
20
T
3
120
J
= −55°C
25
140
3.5
160
30
4