NSM21356DW6T1G ON Semiconductor, NSM21356DW6T1G Datasheet

TRANS PNP/NPN MONO BIAS SOT-363

NSM21356DW6T1G

Manufacturer Part Number
NSM21356DW6T1G
Description
TRANS PNP/NPN MONO BIAS SOT-363
Manufacturer
ON Semiconductor
Series
-r
Datasheet

Specifications of NSM21356DW6T1G

Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V, 65V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V / 220 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
-
Power - Max
230mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
NSM21356DW6T1G
Dual Complementary
Transistors
General Purpose PNP Transistor and
NPN Transistors with Monolithic Bias
Network
monolithic bias network NPN transistor with two resistors; a series
base resistor and a base-emitter resistor. This device is designed to
replace multiple transistors and resistors on customer boards by
i n t e g r a t i n g t h e s e c o m p o n e n t s i n t o a s i n g l e d e v i c e .
NSM21356DW6T1G is housed in a SC-88/SOT-363 package which
is ideal for low power surface mount applications in space constrained
applications.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
(T
© Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
A
Collector‐Base Voltage
Collector‐Emitter Voltage
Collector Current
NSM21356DW6T1G contains a single PNP transistor and a
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Q1: NPN BRT, R1 = R2 = 47 k
Q2: PNP
This is a Pb-Free Device
Logic Switching
Amplification
Driver Circuits
Interface Circuits
= 25°C unless otherwise noted)
Rating - Q1 (NPN BRT)
Rating - Q2 (PNP)
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
V
V
CBO
CEO
I
I
C
C
Value
Value
-100
- 5.0
100
- 80
- 65
50
50
1
mAdc
mAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
†For information on tape and reel specifications,
NSM21356DW6T1G
*Date Code orientation and/or position may vary
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
depending upon manufacturing location.
Device
N2
M
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
(4)
(3)
Q
1
MARKING DIAGRAM
http://onsemi.com
R
SC-88/SOT-363
6
1
= Device Code
= Date Code*
= Pb-Free Package
2
CASE 419B
STYLE 1
(Pb-Free)
Package
(5)
N2 M G
SC-88
6
1
Publication Order Number:
R
G
(2)
1
NSM21356DW6/D
3000/Tape & Reel
Shipping
(1)
Q
(6)
2

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NSM21356DW6T1G Summary of contents

Page 1

... NPN transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards NSM21356DW6T1G is housed in a SC-88/SOT-363 package which is ideal for low power surface mount applications in space constrained applications. Features • ...

Page 2

... Collector‐Emitter Saturation Voltage ( mA 0.3 mA Output Voltage ( 1.0 kW Output Voltage (off 5 0 1.0 kW Input Resistor Resistor Ratio 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% NSM21356DW6T1G (T = 25°C unless otherwise noted) A Symbol I CBO I CEO I EBO V (BR)CBO V (BR)CEO CE(sat R1/R2 http://onsemi.com ...

Page 3

... Base - Emitter Saturation Voltage (I = -10 mA -0.5 mA -100 mA -5.0 mA Base - Emitter On Voltage (I = -2 - 300 250 200 150 100 NSM21356DW6T1G (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO = 150° CE(sat) V BE(sat) V BE(on 833°C/W qJA 0 50 100 T , AMBIENT TEMPERATURE (° ...

Page 4

... LITERATURE FULFILLMENT:  Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com NSM21356DW6T1G PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI 2 ...

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