SI3015-BS Silicon Laboratories Inc, SI3015-BS Datasheet - Page 7

• Manufacturer Part Number: SI3015-BS
• Description: IC ISOMODEM LINE-SIDE 16SOIC
• Manufacturer: Silicon Laboratories Inc
• Type: Enhanced Global Direct Access Arrangementr

Specifications of SI3015-BS

• Package / Case: 16-SOIC (3.9mm Width)
• Data Format: V.90
• Interface: Serial
• Voltage - Supply: 3.3 V ~ 5 V
• Mounting Type: Surface Mount
• Product: Modem Module
• Supply Current: 0.3 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Baud Rates: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant

Table 5. AC Characteristics
(V
Parameter
Transmit Frequency Response
Receive Frequency Response
Transmit Full Scale Level
Receive Full Scale Level
Dynamic Range
Dynamic Range
Dynamic Range
Transmit Total Harmonic Distortion
Transmit Total Harmonic Distortion
Receive Total Harmonic Distortion
Receive Total Harmonic Distortion
Dynamic Range (call progress AOUT)
THD (call progress AOUT)
AOUT Full Scale Level
AOUT Output Impedance
Mute Level (call progress AOUT)
Dynamic Range (Caller ID mode)
Caller ID Full Scale Level (0 dB gain)
Notes:
D
= 3.0 to 5.25 V, V
1. Measured at TIP and RING with 600 Ω termination at 1 kHz, as shown in Figure 1 on page 5.
2. Receive full scale level will produce –0.9 dBFS.
3. DR = 20 log |Vin| + 20 log (RMS signal/RMS noise). Measurement bandwidth is 300 to 3400 Hz. Applies to both
4. THD = 20 log (RMS distortion/RMS signal). Vin = 1 kHz, –3 dBFS, Fs = 10300 Hz.
transmit and receive paths. Vin = 1 kHz, –3 dBFS, Fs = 10300 Hz.
3
3
3
A
= Charge Pump, T
1,2
1
4
4
4
4
A
= 0 to 70°C)
Symbol
THD
DR
DR
THD
THD
THD
THD
V
V
V
DR
DR
DR
CID
FS
FS
CID
AO
AO
VIN = 1 kHz, –13 dBFS
Rev. 2.01
Low –3 dBFS Corner
Low –3 dBFS Corner
(CTR21), I
(CTR21), I
(Japan), I
(Japan), I
(Japan), I
ACT = 0, DCT = 10
(FCC), I
ACT = 0, DCT = 01
ACT = 1, DCT = 11
ACT = 0, DCT = 10
(FCC), I
ACT = 0, DCT = 01
ACT = 0, DCT = 01
ACT = 1, DCT = 11
Test Condition
VIN = 1 kHz
VIN = 1 kHz
L
L
L
L
L
= 100 mA
= 100 mA
L
L
= 20 mA
= 20 mA
= 20 mA
= 60 mA
= 60 mA
Min
–90
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.75 V
Typ
–85
–76
–74
–82
1.0
0.8
82
83
84
10
60
—
—
0
5
1
1
D
Si3038
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
V
V
dBFS
Unit
V
PEAK
PEAK
PEAK
Hz
Hz
dB
dB
dB
dB
dB
dB
dB
dB
kΩ
dB
%
PP
7