GBPC2502W-E4/1 Vishay, GBPC2502W-E4/1 Datasheet - Page 4
![](/photos/31/41/314160/gbpc12_sml.jpg)
GBPC2502W-E4/1
Manufacturer Part Number
GBPC2502W-E4/1
Description
Manufacturer
Vishay
Datasheet
1.GBPC2502W-E41.pdf
(5 pages)
Specifications of GBPC2502W-E4/1
Phase Type
Single Phase
Number Of Elements
1
Peak Rep Rev Volt
200V
Rms Voltage (max)
140V
Peak Non-repetitive Surge Current (max)
300A
Avg. Forward Curr (max)
25A
Rev Curr
5uA
Forward Voltage
1.1V
Package Type
Case GBPC-W
Operating Temp Range
-55C to 150C
Pin Count
4
Mounting
Screw
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Compliant
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
100
10
Fig. 7 - Typical Junction Capacitance Per Diode
1
0.220 (5.59)
0.200 (5.08)
#10 Screw
Hole for
0.310 (7.87)
0.290 (7.36)
1.115 (28.3)
1.135 (28.8)
0.042 (1.07)
0.038 (0.97)
0.24 (6.0)
0.18 (4.6)
DIA.
Reverse Voltage (V)
DIA.
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
10
GBPC-W
0.430 (10.9)
0.470 (11.9)
1.135 (28.8)
0.732 (18.6)
0.692 (17.6)
1.115 (28.3)
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
This document is subject to change without notice.
0.44 (11.7)
0.50 (12.7)
0.18 (4.6)
0.24 (6.0)
0.732 (18.6)
0.692 (17.6)
(31.8)
100
MIN.
1.25
1.135 (28.8)
1.115 (28.3)
0.310 (7.62)
0.290 (7.36)
0.200 (5.08)
0.220 (5.59)
#10 Screw
Hole for
0.034 (0.86)
0.030 (0.76)
0.094 (2.4)
1000
0.632 (16.1)
Fig. 8 - Typical Transient Thermal Impedance Per Diode
0.672 (17.1)
0.034 (0.86)
0.030 (0.76)
100
DIA.
10
1
0.01
DiodesEurope@vishay.com
DIA.
GBPC
0.1
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.672 (17.1)
0.632 (16.1)
t - Heating Time (s)
(6.35)
0.25
1
AC
www.vishay.com/doc?91000
0.582 (14.8)
0.542 (13.8)
Document Number: 88612
T
f = 1.0 MHz
V
0.840 (21.3)
0.740 (18.8)
J
sig
10
= 25 °C
= 50 mVp-p
Revision: 28-Mar-11
100