MT46V16M16P-5B:M Micron Technology Inc, MT46V16M16P-5B:M Datasheet - Page 48

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MT46V16M16P-5B:M

Manufacturer Part Number
MT46V16M16P-5B:M
Description
IC SDRAM 256MB 200MHZ 66TSOP
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT46V16M16P-5B:M

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP (0.400", 10.16mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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READ
Figure 18:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. P; Core DDR Rev. D 2/11 EN
READ Command
Note:
The READ command is used to initiate a burst read access to an active row, as shown in
Figure 18 on page 48. The value on the BA0, BA1 inputs selects the bank, and the address
provided on inputs A0–Ai (where Ai is the most significant column address bit for a given
density and configuration, see Table 2 on page 2) selects the starting column location.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
A10
EN AP = enable auto precharge; DIS AP = disable auto precharge.
CK
HIGH
DIS AP
EN AP
Bank
Col
Don’t Care
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands

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