MT46V32M16CY-5B:J Micron Technology Inc, MT46V32M16CY-5B:J Datasheet - Page 76

• Manufacturer Part Number: MT46V32M16CY-5B:J
• Description: IC SDRAM 512MB 200MHZ 60FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT46V32M16CY-5B:J

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 39:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. O; Core DDR Rev. D 2/11 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Command
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
NOP
76
DI
T1
b
DI
b
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
512Mb: x4, x8, x16 DDR SDRAM
T2n
NOP
T3
Don’t Care
©2000 Micron Technology, Inc. All rights reserved.
Operations