MT41J512M4HX-187E:D Micron Technology Inc, MT41J512M4HX-187E:D Datasheet - Page 179

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MT41J512M4HX-187E:D

Manufacturer Part Number
MT41J512M4HX-187E:D
Description
IC DDR3 SDRAM 2GBIT 78FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet

Specifications of MT41J512M4HX-187E:D

Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (512M x 4)
Speed
533MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse)
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D5.fm - Rev G 2/09 EN
If the time in the precharge power down or idle states is very short (short CKE LOW
pulse), the power-down entry and power-down exit transition periods will overlap.
When overlap occurs, the response of the DRAM’s R
be synchronous or asynchronous from the start of the power-down entry transition
period to the end of the power-down exit transition period even if the entry period ends
later than the exit period (see Figure 119 on page 180).
If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit
and power-down entry transition periods overlap. When this overlap occurs, the
response of the DRAM’s R
chronous from the start of power-down exit transition period to the end of the power-
down entry transition period (see Figure 119 on page 180).
TT
to a change in the ODT state may be synchronous or asyn-
179
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2Gb: x4, x8, x16 DDR3 SDRAM
TT
to a change in the ODT state may
On-Die Termination (ODT)
©2006 Micron Technology, Inc. All rights reserved.

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