MT47H256M8EB-187E:C Micron Technology Inc, MT47H256M8EB-187E:C Datasheet - Page 25

• Manufacturer Part Number: MT47H256M8EB-187E:C
• Description: IC DDR2 SDRAM 2GBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H256M8EB-187E:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 1.875ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 6: Temperature Limits
Figure 12: Example Temperature Test Point Location
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. F 12/10 EN
Parameter
Storage temperature
Operating temperature – commercial
Operating temperature – industrial
Notes:
Test point
1. MAX storage case temperature T
2. MAX operating case temperature T
3. Device functionality is not guaranteed if the device exceeds maximum T
4. Both temperature specifications must be satisfied.
5. Operating ambient temperature surrounding the package.
in Figure 12. This case temperature limit is allowed to be exceeded briefly during pack-
age reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering
Parameters.”
in Figure 12.
tion.
Lmm x Wmm FBGA
Width (W)
0.5 (W)
0.5 (L)
Length (L)
Electrical Specifications – Absolute Ratings
25
Symbol
T
T
AMB
T
T
STG
C
C
STG
C
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package, as shown
is measured in the center of the package, as shown
Min
–55
–40
–40
0
2Gb: x4, x8, x16 DDR2 SDRAM
Max
150
85
95
85
© 2006 Micron Technology, Inc. All rights reserved.
Units
°C
°C
°C
°C
C
during opera-
Notes
2, 3, 4
2, 3
4, 5
1