N25Q128A11BF840F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11BF840F Datasheet - Page 121
N25Q128A11BF840F
Manufacturer Part Number
N25Q128A11BF840F
Description
IC SRL FLASH 128MB NMX 8-VDFPN
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet
1.N25Q128A11B1241F.pdf
(185 pages)
Specifications of N25Q128A11BF840F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11BF840F
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9.2.9
9.2.10
DQ0
DQ1
C
S
Sector Erase (SE)
The Sector Erase (SE) instruction sets to '1' (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
Apart form the parallelizing of the instruction code and the address on the two pins DQ0 and
DQ1, the instruction functionality is exactly the same as the Sector Erase (SE) instruction of
the Extended SPI protocol, please refer to
details.
Figure 54. Sector Erase instruction sequence DIO-SPI
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to '1' (FFh). Before it can be accepted, a Write
Enable (WREN) instruction must previously have been executed.
Apart form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the
instruction functionality is exactly the same as the Bulk Erase (BE) instruction of the
Extended SPI protocol, please refer to
0
Instruction
1
2
3
23 21 19 17
22 20 18 16
4
5
6
Section 9.1.19: Bulk Erase (BE)
7
24-Bit Address
15 13 11 9
14 12 10 8
Section 9.1.18: Sector Erase (SE)
8
9 10 11
12 13 14 15
7
6
5
4
3
2
for further details.
1
0
Dual_Sector_Erase
for further
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