MT8HTF12864HZ-667H1 Micron Technology Inc, MT8HTF12864HZ-667H1 Datasheet - Page 11

• Manufacturer Part Number: MT8HTF12864HZ-667H1
• Description: MODULE DDR2 SDRAM 1GB 200SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT8HTF12864HZ-667H1

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 667MT/s
• Features: -
• Package / Case: 200-SODIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 9: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef83c2a451
htf8c128_256x64hz.pdf - Rev. C 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
(I
HIGH between valid commands; Address bus inputs are stable during deselects;
Data bus inputs are switching
DD
),
t
RC =
OUT
= 0mA; BL = 4, CL = CL (I
t
RC (I
DD
DD
),
t
RRD =
Specifications and Conditions – 1GB (Continued)
t
RRD (I
DD
DD
),
), AL =
t
RCD =
t
RCD (I
t
RCD (I
1GB, 2GB (x64, SR) 200-Pin DDR2 SDRAM SODIMM
DD
DD
) - 1 ×
); CKE is HIGH, S# is
11
t
CK (I
DD
);
t
CK =
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
CK
Symbol
I
DD7
-1GA
3400
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
-80E/
-800
2680
Specifications
2240
-667
Units
mA