MT18HTF12872FDZ-667G1N8 Micron Technology Inc, MT18HTF12872FDZ-667G1N8 Datasheet - Page 10

• Manufacturer Part Number: MT18HTF12872FDZ-667G1N8
• Description: MODULE DDR2 SDRAM 1GB 240FBDIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT18HTF12872FDZ-667G1N8

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 667MT/s
• Features: -
• Package / Case: 240-FBDIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 7: I
Table 8: I
Table 9: I
Table 10: I
Table 11: I
Serial Presence-Detect EEPROM
PDF: 09005aef83d4d75e
htf18c128_256x72fdz.pdf - Rev. B 07/10 EN
Symbol
I
I
I
Symbol
I
I
Total power
Symbol
I
I
Total power
Symbol
I
I
Total power
Symbol
I
I
Total power
DD_TRAINING
DD_IBIST
DD_EI
CC
DD
CC
DD
CC
DD
CC
DD
DD
DD
DD
DD
DD
Conditions (Continued)
Specifications – 1GB DDR2-667
Specifications – 1GB DDR2-800
Specifications – 2GB DDR2-667
Specifications – 2GB DDR2-800
I
I
I
I
DD_IDLE_0
DD_IDLE_0
DD_IDLE_0
DD_IDLE_0
2600
1510
2600
1420
TBD
TBD
TBD
TBD
TBD
TBD
Note:
Note:
7.0
6.8
Condition
Training: Primary and secondary channels enabled; 100% toggle on all channel lanes;
DRAMs idle; 0% bandwidth; CKE HIGH; Command and address lines stable; DDR2 SDRAM
clock active
IBIST over all IBIST modes: DRAM idle (0% bandwidth); Primary channel enabled; Secon-
dary channel enabled; CKE HIGH; Command and address lines stable; DDR2 SDRAM clock active
Electrical idle: DRAM idle (0% bandwidth); Primary channel disabled; Secondary channel
disabled; CKE LOW; Command and address lines floated; DDR2 SDRAM clock active; ODT and
CKE driven LOW
1. Actual test conditions may vary from published JEDEC test conditions.
1. Total power is based on maximum voltage levels, I
I
I
I
I
DD_IDLE_1
DD_IDLE_1
DD_IDLE_1
DD_IDLE_1
3400
1510
3400
1420
TBD
TBD
TBD
TBD
TBD
TBD
8.2
8.1
I
I
I
I
DD_ACTIVE_1
DD_ACTIVE_1
DD_ACTIVE_1
DD_ACTIVE_1
1GB, 2GB (x72, DR) 240-Pin DDR2 SDRAM FBDIMM
3900
2777
3900
2515
11.4
TBD
TBD
TBD
11.0
TBD
TBD
TBD
10
I
I
I
I
DD_ACTIVE_2
DD_ACTIVE_2
DD_ACTIVE_2
DD_ACTIVE_2
3700
1510
3700
1420
TBD
TBD
TBD
TBD
TBD
TBD
8.7
8.5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Serial Presence-Detect EEPROM
I
I
I
I
DD_TRAINING
DD_TRAINING
DD_TRAINING
DD_TRAINING
4000
1510
4000
1420
TBD
TBD
TBD
TBD
TBD
TBD
9.2
9.0
CC
at 1.575V and I
I
I
I
I
© 2009 Micron Technology, Inc. All rights reserved.
DD_IBIST
DD_IBIST
DD_IBIST
DD_IBIST
4500
1510
4500
1420
10.0
TBD
TBD
TBD
TBD
TBD
TBD
9.8
DD
at 1.9V.
I
I
I
I
2500
2500
DD_EI
DD_EI
TBD
TBD
TBD
DD_EI
DD_EI
TBD
TBD
TBD
326
326
4.6
4.6
Units
Units
Units
Units
W
W
W
W
A
A
A
A
A
A
A
A